Hongwen Yan

Person

Somers, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma co-doping to reduce the forming voltage in resistive random...
- Patent number 11,844,290
- Issue date Dec 12, 2023
- Tokyo Electron Limited
- Devi Koty
Information Patent Grant
Microfabricated air bridges for quantum circuits
- Patent number 11,575,077
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Vivekananda P. Adiga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
III-V extension by high temperature plasma doping
- Patent number 11,018,225
- Issue date May 25, 2021
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench metal-alloying for III-V nFETs
- Patent number 10,366,918
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma shallow doping and wet removal of depth control cap
- Patent number 10,276,384
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array and moat isolation structures and method of manufacture
- Patent number 9,240,452
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- Naoyoshi Kusaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable high-K tetragonal HFO2 layer within high aspect ra...
- Patent number 9,087,927
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with dual trench regions and methods of ma...
- Patent number 8,907,405
- Issue date Dec 9, 2014
- International Business Machines Corporation
- Reinaldo A. Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable high-K tetragonal HFO2 layer within high aspect ra...
- Patent number 8,901,706
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 8,785,281
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array and moat isolation structures and method of manufacture
- Patent number 8,673,737
- Issue date Mar 18, 2014
- International Business Machines Corporation
- Naoyoshi Kusaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing high-K dielectric layer on sidewalls of gate str...
- Patent number 8,481,389
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistors having high-K gate dielectric layers and...
- Patent number 8,227,874
- Issue date Jul 24, 2012
- International Business Machines Corporation
- James William Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Addition of ballast hydrocarbon gas to doped polysilicon etch maske...
- Patent number 8,198,103
- Issue date Jun 12, 2012
- International Business Machines Corporation
- Timothy J. Dalton
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Protecting exposed metal gate structures from etching processes in...
- Patent number 8,193,099
- Issue date Jun 5, 2012
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate integration structure and method including metal fuse, a...
- Patent number 8,159,040
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 8,158,481
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS (complementary metal oxide semiconductor) devices having metal...
- Patent number 8,018,005
- Issue date Sep 13, 2011
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct contact between high-κ/metal gate and wiring process flow
- Patent number 7,863,123
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Residue free patterned layer formation method applicable to CMOS st...
- Patent number 7,863,124
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced high-k gate stack patterning and structure containing a pa...
- Patent number 7,820,552
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Siva Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning multilayer metal gate structures for CMOS devices
- Patent number 7,820,555
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistors having high-K gate dielectric layers and...
- Patent number 7,790,559
- Issue date Sep 7, 2010
- International Business Machines Corporation
- James William Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS (complementary metal oxide semiconductor) devices having metal...
- Patent number 7,749,830
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate stack and structure thereof
- Patent number 7,691,701
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure and method for fabrication thereof using multiple cr...
- Patent number 7,671,421
- Issue date Mar 2, 2010
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for shielding a wafer from charged particles d...
- Patent number 7,438,822
- Issue date Oct 21, 2008
- International Business Machines Corporation
- Hongwen Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration schemes for fabricating polysilicon gate MOSFET and hig...
- Patent number 7,435,652
- Issue date Oct 14, 2008
- International Business Machines Corporation
- Tze-chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring structure for integrated circuit with reduced intralevel cap...
- Patent number 7,329,602
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Richard S. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced dielectric constant spacer materials integration for high s...
- Patent number 7,081,393
- Issue date Jul 25, 2006
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...
- Publication number 20220393107
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Devi KOTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL MATERIAL FACILITATING PROTECTION OF A SUBSTRATE IN A QU...
- Publication number 20220123195
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Vivekananda P. Adiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROFABRICATED AIR BRIDGES FOR QUANTUM CIRCUITS
- Publication number 20210217947
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Vivekananda P. Adiga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20190311945
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218908
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218909
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218907
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20180096885
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING
- Publication number 20170373149
- Publication date Dec 28, 2017
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...
- Publication number 20150044853
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE
- Publication number 20140124952
- Publication date May 8, 2014
- International Business Machines Corporation
- Naoyoshi KUSABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...
- Publication number 20130175665
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE
- Publication number 20130093043
- Publication date Apr 18, 2013
- International Business Machines Corporation
- Naoyoshi KUSABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION IN SUBSTRATE
- Publication number 20130043559
- Publication date Feb 21, 2013
- International Business Machines Corporation
- JUNEDONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DUAL TRENCH REGIONS AND METHODS OF MA...
- Publication number 20120261771
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Reinaldo A. VEGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Removing High-K Dielectric Layer on Sidewalls of Gate Str...
- Publication number 20120256278
- Publication date Oct 11, 2012
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...
- Publication number 20120142181
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS HAVING HIGH-K GATE DIELECTRIC LAYERS AND...
- Publication number 20100314697
- Publication date Dec 16, 2010
- International Business Machines Corporation
- James William Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...
- Publication number 20100258875
- Publication date Oct 14, 2010
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT CONTACT BETWEEN HIGH-K/METAL GATE AND WIRING PROCESS FLOW
- Publication number 20100181630
- Publication date Jul 22, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...
- Publication number 20100112800
- Publication date May 6, 2010
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, A...
- Publication number 20090283840
- Publication date Nov 19, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH-K/METAL GATES FOR NFETS AND PFETS
- Publication number 20090250760
- Publication date Oct 8, 2009
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS HAVING HIGH-K GATE DIELECTRIC LAYERS AND...
- Publication number 20090212376
- Publication date Aug 27, 2009
- James William Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...
- Publication number 20090194820
- Publication date Aug 6, 2009
- International Business Machines Corporation
- Bruce Bennett Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER
- Publication number 20090152651
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES
- Publication number 20090104776
- Publication date Apr 23, 2009
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING MULTILAYER METAL GATE STRUCTURES FOR CMOS DEVICES
- Publication number 20090098737
- Publication date Apr 16, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDITION OF BALLAST HYDROCARBON GAS TO DOPED POLYSILICON ETCH MASKE...
- Publication number 20080286972
- Publication date Nov 20, 2008
- International Business Machines Corporation
- Timothy J. Dalton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESIDUE FREE PATTERNED LAYER FORMATION METHOD APPLICABLE TO CMOS ST...
- Publication number 20080280404
- Publication date Nov 13, 2008
- International Business Machines Corporation
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Hongwen Yan

Person

Patents Grantslast 30 patents

Plasma co-doping to reduce the forming voltage in resistive random...

Microfabricated air bridges for quantum circuits

III-V extension by high temperature plasma doping

Self-aligned trench metal-alloying for III-V nFETs

Plasma shallow doping and wet removal of depth control cap

Array and moat isolation structures and method of manufacture

Thermally stable high-K tetragonal HFO2 layer within high aspect ra...

Semiconductor structures with dual trench regions and methods of ma...

Thermally stable high-K tetragonal HFO2 layer within high aspect ra...

CMOS structure and method for fabrication thereof using multiple cr...

Array and moat isolation structures and method of manufacture

Method of removing high-K dielectric layer on sidewalls of gate str...

Semiconductor transistors having high-K gate dielectric layers and...

Addition of ballast hydrocarbon gas to doped polysilicon etch maske...

Protecting exposed metal gate structures from etching processes in...

Metal gate integration structure and method including metal fuse, a...

CMOS structure and method for fabrication thereof using multiple cr...

CMOS (complementary metal oxide semiconductor) devices having metal...

Direct contact between high-κ/metal gate and wiring process flow

Residue free patterned layer formation method applicable to CMOS st...

Advanced high-k gate stack patterning and structure containing a pa...

Method of patterning multilayer metal gate structures for CMOS devices

Semiconductor transistors having high-K gate dielectric layers and...

CMOS (complementary metal oxide semiconductor) devices having metal...

Method of forming gate stack and structure thereof

CMOS structure and method for fabrication thereof using multiple cr...

Apparatus and method for shielding a wafer from charged particles d...

Integration schemes for fabricating polysilicon gate MOSFET and hig...

Wiring structure for integrated circuit with reduced intralevel cap...

Reduced dielectric constant spacer materials integration for high s...

Patents Applicationslast 30 patents

Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...

SACRIFICIAL MATERIAL FACILITATING PROTECTION OF A SUBSTRATE IN A QU...

MICROFABRICATED AIR BRIDGES FOR QUANTUM CIRCUITS

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...

ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RA...

ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE

TRENCH FORMATION IN SUBSTRATE

SEMICONDUCTOR STRUCTURES WITH DUAL TRENCH REGIONS AND METHODS OF MA...

Method of Removing High-K Dielectric Layer on Sidewalls of Gate Str...

CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...

SEMICONDUCTOR TRANSISTORS HAVING HIGH-K GATE DIELECTRIC LAYERS AND...

CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...

DIRECT CONTACT BETWEEN HIGH-K/METAL GATE AND WIRING PROCESS FLOW

CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CR...

METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, A...

METHODS OF FORMING HIGH-K/METAL GATES FOR NFETS AND PFETS

SEMICONDUCTOR TRANSISTORS HAVING HIGH-K GATE DIELECTRIC LAYERS AND...

CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) DEVICES HAVING METAL...

GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER

METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES

METHOD OF PATTERNING MULTILAYER METAL GATE STRUCTURES FOR CMOS DEVICES

ADDITION OF BALLAST HYDROCARBON GAS TO DOPED POLYSILICON ETCH MASKE...

RESIDUE FREE PATTERNED LAYER FORMATION METHOD APPLICABLE TO CMOS ST...