Hongxin Yang

Person

Newark, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bidirectional selector device for memory applications
- Patent number 11,538,857
- Issue date Dec 27, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell including two-terminal selector device
- Patent number 11,127,787
- Issue date Sep 21, 2021
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory array incorporating selectors and method for manufa...
- Patent number 11,127,782
- Issue date Sep 21, 2021
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory cell including two-terminal selector device
- Patent number 10,593,727
- Issue date Mar 17, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector device having asymmetric conductance for memory applications
- Patent number 10,559,624
- Issue date Feb 11, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory incorporating dual selectors
- Patent number 10,522,590
- Issue date Dec 31, 2019
- Avalanche Technology, Inc.
- Kimihiro Satoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device incorporating conductive clusters for memory applic...
- Patent number 10,224,367
- Issue date Mar 5, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,217,934
- Issue date Feb 26, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,177,308
- Issue date Jan 8, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for sensing memory element coupled to selector device
- Patent number 10,153,017
- Issue date Dec 11, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device incorporating selector element with multiple thresholds
- Patent number 9,812,499
- Issue date Nov 7, 2017
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bidirectional Selector Device for Memory Applications
- Publication number 20220352255
- Publication date Nov 3, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Cell Including Two-Terminal Selector Device
- Publication number 20200185455
- Publication date Jun 11, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Array Incorporating Selectors and Method for Manufa...
- Publication number 20200006422
- Publication date Jan 2, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Incorporating Dual Selectors
- Publication number 20190288031
- Publication date Sep 19, 2019
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selector Device Incorporating Conductive Clusters for Memory Applic...
- Publication number 20190172871
- Publication date Jun 6, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180366642
- Publication date Dec 20, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180358547
- Publication date Dec 13, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Cell Including Two-Terminal Selector Device
- Publication number 20180240845
- Publication date Aug 23, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selector Device Having Asymmetric Conductance for Memory Applications
- Publication number 20180240844
- Publication date Aug 23, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Sensing Memory Element Coupled to Selector Device
- Publication number 20180075891
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Selector Device Incorporating Conductive Clusters for Memory Applic...
- Publication number 20170338279
- Publication date Nov 23, 2017
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS

Hongxin Yang

Person

Patents Grantslast 30 patents

Bidirectional selector device for memory applications

Magnetic memory cell including two-terminal selector device

Magnetic memory array incorporating selectors and method for manufa...

Magnetic memory cell including two-terminal selector device

Selector device having asymmetric conductance for memory applications

Magnetic memory incorporating dual selectors

Selector device incorporating conductive clusters for memory applic...

Method for manufacturing magnetic memory cells

Method for manufacturing magnetic memory cells

Method for sensing memory element coupled to selector device

Memory device incorporating selector element with multiple thresholds

Patents Applicationslast 30 patents

Bidirectional Selector Device for Memory Applications

Magnetic Memory Cell Including Two-Terminal Selector Device

Magnetic Memory Array Incorporating Selectors and Method for Manufa...

Magnetic Memory Incorporating Dual Selectors

Selector Device Incorporating Conductive Clusters for Memory Applic...

Method for Manufacturing Magnetic Memory Cells

Method for Manufacturing Magnetic Memory Cells

Magnetic Memory Cell Including Two-Terminal Selector Device

Selector Device Having Asymmetric Conductance for Memory Applications

Method for Sensing Memory Element Coupled to Selector Device

Selector Device Incorporating Conductive Clusters for Memory Applic...