Hongyong Xue

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,031,465
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for precisely aligning backside pattern to frontside pattern...
- Patent number 10,833,021
- Issue date Nov 10, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having one or more titanium interlayers and me...
- Patent number 10,763,125
- Issue date Sep 1, 2020
- ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN), LTD
- Wei He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT incorporating epitaxial layer field stop zone
- Patent number 10,686,038
- Issue date Jun 16, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact for trench power MOSFET
- Patent number 10,644,118
- Issue date May 5, 2020
- Alpha and Omega Semiconductor Incorporated
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having one or more titanium interlayers and me...
- Patent number 10,438,813
- Issue date Oct 8, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Wei He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with high aspect ratio trench contacts and submicron p...
- Patent number 10,424,654
- Issue date Sep 24, 2019
- Alpha and Omega Semiconductor Incorporated
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT incorporating epitaxial layer field stop zo...
- Patent number 10,170,559
- Issue date Jan 1, 2019
- Alpha and Omega Semiconductor (Cayman) LTD
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with high aspect ratio trench contacts and submicron p...
- Patent number 10,020,380
- Issue date Jul 10, 2018
- Alpha and Omega Semiconductor Incorporated
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power mosfet with protected shield oxide
- Patent number 9,865,694
- Issue date Jan 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power MOSFET with protected shield oxide
- Patent number 9,741,808
- Issue date Aug 22, 2017
- Alpha and Omage Semiconductor Inc.
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact for trench power MOSFET
- Patent number 9,691,863
- Issue date Jun 27, 2017
- Alpha and Omega Semiconductor Incorporated
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power MOSFET with protected shield oxide
- Patent number 9,281,368
- Issue date Mar 8, 2016
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step tungsten etchback process to preserve barrier integrity...
- Patent number 6,872,668
- Issue date Mar 29, 2005
- Integrated Device Technology, Inc.
- Wanqing Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20210273046
- Publication date Sep 2, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ONE OR MORE TITANIUM INTERLAYERS AND ME...
- Publication number 20190385863
- Publication date Dec 19, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Wei He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190273131
- Publication date Sep 5, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ONE OR MORE TITANIUM INTERLAYERS AND ME...
- Publication number 20190148165
- Publication date May 16, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Wei He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190088745
- Publication date Mar 21, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190006461
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRECISELY ALIGNING BACKSIDE PATTERN TO FRONTSIDE PATTERN...
- Publication number 20190006285
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZO...
- Publication number 20190006467
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON P...
- Publication number 20180323282
- Publication date Nov 8, 2018
- Alpha & Omega Semiconductor, Incorporated
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET
- Publication number 20170288028
- Publication date Oct 5, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE
- Publication number 20170133473
- Publication date May 11, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET
- Publication number 20160300917
- Publication date Oct 13, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hongyong Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON P...
- Publication number 20160218008
- Publication date Jul 28, 2016
- Alpha & Omega Semiconductor, Incorporated
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE
- Publication number 20160190265
- Publication date Jun 30, 2016
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS

Hongyong Xue

Person

Patents Grantslast 30 patents

Semiconductor device incorporating epitaxial layer field stop zone

Semiconductor device incorporating epitaxial layer field stop zone

Method for precisely aligning backside pattern to frontside pattern...

Semiconductor device having one or more titanium interlayers and me...

Reverse conducting IGBT incorporating epitaxial layer field stop zone

Self-aligned contact for trench power MOSFET

Semiconductor device having one or more titanium interlayers and me...

Power device with high aspect ratio trench contacts and submicron p...

Reverse conducting IGBT incorporating epitaxial layer field stop zo...

Power device with high aspect ratio trench contacts and submicron p...

Split-gate trench power mosfet with protected shield oxide

Split-gate trench power MOSFET with protected shield oxide

Self-aligned contact for trench power MOSFET

Split-gate trench power MOSFET with protected shield oxide

Multi-step tungsten etchback process to preserve barrier integrity...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE HAVING ONE OR MORE TITANIUM INTERLAYERS AND ME...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE HAVING ONE OR MORE TITANIUM INTERLAYERS AND ME...

REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR PRECISELY ALIGNING BACKSIDE PATTERN TO FRONTSIDE PATTERN...

REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZO...

POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON P...

SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET

SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE

SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET

POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON P...

SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE