HongYu Yu

Person

Heverlee, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with reduced diffusion of workfunction modulat...
- Patent number 7,759,748
- Issue date Jul 20, 2010
- IMEC
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a Yb-doped Ni full silicidation low work function...
- Patent number 7,504,329
- Issue date Mar 17, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH DUAL FULLY SILI...
- Publication number 20090134469
- Publication date May 28, 2009
- Interuniversitair Microelektronica Centrum (IMEC) VZW
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Modulating the Effective Work Function
- Publication number 20090050982
- Publication date Feb 26, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- Luigi Pantisano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a doped metal comprising main elect...
- Publication number 20080136030
- Publication date Jun 12, 2008
- Interuniversitair MicroelektronicaCentrum (IMEC)
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor device and semiconductor device...
- Publication number 20080105933
- Publication date May 8, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTIPLE DIELEC...
- Publication number 20080096383
- Publication date Apr 24, 2008
- Interuniversitair Microelektronica Centrum (IMEC) VZW
- Howard Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Modulating the Effective Work Function
- Publication number 20070272967
- Publication date Nov 29, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Luigi Pantisano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a fully germano-silicided gate MOSFET and device...
- Publication number 20070023849
- Publication date Feb 1, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WORK FUNCTION METAL ALLOY
- Publication number 20060286802
- Publication date Dec 21, 2006
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device with reduced diffusion of workfunction modulat...

Method of forming a Yb-doped Ni full silicidation low work function...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH DUAL FULLY SILI...

Method for Modulating the Effective Work Function

Semiconductor device comprising a doped metal comprising main elect...

Method for forming a semiconductor device and semiconductor device...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTIPLE DIELEC...

Method for Modulating the Effective Work Function

Method for forming a fully germano-silicided gate MOSFET and device...

LOW WORK FUNCTION METAL ALLOY