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Hongyun Cottle
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Austin, TX, US
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Patents Grants
last 30 patents
Information
Patent Grant
Method of quasi atomic layer etching
Patent number
10,438,797
Issue date
Oct 8, 2019
Tokyo Electron Limited
Hongyun Cottle
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Graphoepitaxy directed self assembly
Patent number
9,632,408
Issue date
Apr 25, 2017
International Business Machines Corporation
Hongyun Cottle
B81 - MICRO-STRUCTURAL TECHNOLOGY
Information
Patent Grant
Selective etch process for silicon nitride
Patent number
8,501,630
Issue date
Aug 6, 2013
Tokyo Electron Limited
Andrew W. Metz
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Method of Quasi Atomic Layer Etching
Publication number
20180068852
Publication date
Mar 8, 2018
TOKYO ELECTRON LIMITED
Hongyun Cottle
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PREFERENTIAL SHRINK AND BIAS CONTROL IN CONTACT SHRINK ETCH
Publication number
20140357080
Publication date
Dec 4, 2014
TOKYO ELECTRON LIMITED
Anthony D. LISI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Selective etch process for silicon nitride
Publication number
20120077347
Publication date
Mar 29, 2012
TOKYO ELECTRON LIMITED
Andrew W. METZ
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for dry cleaning nickel deposits from a processing system
Publication number
20070074741
Publication date
Apr 5, 2007
TOKYO ELECTRON LIMITED
Gordon Bease
B08 - CLEANING