Hou-Ju Li

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,776,911
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming
- Patent number 11,450,757
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,264,380
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,024,582
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming
- Patent number 10,770,570
- Issue date Sep 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET device and methods of forming
- Patent number 10,115,808
- Issue date Oct 30, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high mobility and strain channel
- Patent number 9,997,629
- Issue date Jun 12, 2018
- Taiwan Semiconductor Manufacturing Company
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high mobility and strain channel
- Patent number 9,368,628
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high mobility and strain channel
- Patent number 8,729,634
- Issue date May 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Liang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layout for gate last process
- Patent number 8,125,051
- Issue date Feb 28, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METH...
- Publication number 20230386935
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230387024
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210280516
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Methods of Forming
- Publication number 20200411672
- Publication date Dec 31, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200066718
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hou-Ju LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Methods of Forming
- Publication number 20190067458
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180301417
- Publication date Oct 18, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHODS OF FORMING
- Publication number 20180151706
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with High Mobility and Strain Channel
- Publication number 20160293762
- Publication date Oct 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with High Mobility and Strain Channel
- Publication number 20140008736
- Publication date Jan 9, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with High Mobility and Strain Channel
- Publication number 20130334606
- Publication date Dec 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Liang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISE S/D FOR GATE-LAST ILD0 GAP FILLING
- Publication number 20100078728
- Publication date Apr 1, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hou-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYOUT FOR GATE LAST PROCESS
- Publication number 20100001369
- Publication date Jan 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device structure with source/drain structure and meth...

Semiconductor device and manufacturing method thereof

FinFET device and methods of forming

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

FinFET device and methods of forming

finFET device and methods of forming

FinFET with high mobility and strain channel

FinFET with high mobility and strain channel

FinFET with high mobility and strain channel

Device layout for gate last process

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METH...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FinFET Device and Methods of Forming

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FinFET Device and Methods of Forming

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FINFET DEVICE AND METHODS OF FORMING

FinFET with High Mobility and Strain Channel

FinFET with High Mobility and Strain Channel

FinFET with High Mobility and Strain Channel

RAISE S/D FOR GATE-LAST ILD0 GAP FILLING

DEVICE LAYOUT FOR GATE LAST PROCESS