Houqiang Fu

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 12,159,943
- Issue date Dec 3, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based threshold switching device and memory diode
- Patent number 11,527,573
- Issue date Dec 13, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 11,495,694
- Issue date Nov 8, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-based edge terminations for gallium nitride power devices
- Patent number 11,417,529
- Issue date Aug 16, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based threshold switching device and memory diode
- Patent number 10,964,749
- Issue date Mar 30, 2021
- Arizona Board of Regents on behalf of Arizona State University
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
High-voltage aluminum nitride (AIN) schottky-barrier diodes
- Patent number 10,700,218
- Issue date Jun 30, 2020
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20230106300
- Publication date Apr 6, 2023
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20220013671
- Publication date Jan 13, 2022
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
- Publication number 20210242281
- Publication date Aug 5, 2021
- Kai Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES
- Publication number 20210202257
- Publication date Jul 1, 2021
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-LEAKAGE REGROWN GAN P-N JUNCTIONS FOR GAN POWER DEVICES
- Publication number 20210104603
- Publication date Apr 8, 2021
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN JUNCTIONS WITH MECHANICALLY EXFOLIATED GALLIUM OXIDE AND GALLIUM...
- Publication number 20200295214
- Publication date Sep 17, 2020
- Jossue Montes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
- Publication number 20200144328
- Publication date May 7, 2020
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES
- Publication number 20190140110
- Publication date May 9, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Houqiang Fu

Person

Patents Grantslast 30 patents

GaN vertical-channel junction field-effect transistors with regrown...

Low-leakage regrown GaN p-n junctions for GaN power devices

GaN-based threshold switching device and memory diode

GaN vertical-channel junction field-effect transistors with regrown...

Plasma-based edge terminations for gallium nitride power devices

GaN-based threshold switching device and memory diode

High-voltage aluminum nitride (AIN) schottky-barrier diodes

Patents Applicationslast 30 patents

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE

PLASMA-BASED EDGE TERMINATIONS FOR GALLIUM NITRIDE POWER DEVICES

LOW-LEAKAGE REGROWN GAN P-N JUNCTIONS FOR GAN POWER DEVICES

PN JUNCTIONS WITH MECHANICALLY EXFOLIATED GALLIUM OXIDE AND GALLIUM...

GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE

HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES