Hoyong PARK

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Hwaseong-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Method of plasma etching and method of fabricating semiconductor de...
- Patent number 11,075,089
- Issue date Jul 27, 2021
- Samsung Electronics Co., Ltd.
- Hoyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma etching and method of fabricating semiconductor de...
- Patent number 11,075,088
- Issue date Jul 27, 2021
- Samsung Electronics Co., Ltd.
- Hoyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for fabricating a semiconductor device
- Patent number 10,892,142
- Issue date Jan 12, 2021
- Samsung Electronics Co., Ltd.
- Sangjean Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma etching and method of fabricating semiconductor de...
- Patent number 10,622,217
- Issue date Apr 14, 2020
- Samsung Electronics Co., Ltd.
- Hoyong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PLASMA ETCHING AND METHOD OF FABRICATING SEMICONDUCTOR DE...
- Publication number 20200234964
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Hoyong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PLASMA ETCHING AND METHOD OF FABRICATING SEMICONDUCTOR DE...
- Publication number 20200234965
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Hoyong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20190287766
- Publication date Sep 19, 2019
- Samsung Electronics Co., Ltd.
- SANGJEAN JEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PLASMA ETCHING AND METHOD OF FABRICATING SEMICONDUCTOR DE...
- Publication number 20170229312
- Publication date Aug 10, 2017
- Samsung Electronics Co., Ltd.
- Hoyong PARK
- H01 - BASIC ELECTRIC ELEMENTS