Hoyoung Tang

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device
- Patent number 12,300,309
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Jungmyung Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual port SRAM cell and method of designing the same
- Patent number 12,225,702
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Eojin Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT INCLUDING TERNARY CONTENT ADDRESSABLE MEMORY CELL
- Publication number 20250095735
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Jinmyeong Hong
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING POWER GATING SWITCH
- Publication number 20250079310
- Publication date Mar 6, 2025
- Samsung Electronics Co.,Ltd.
- Hoyoung TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRES
- Publication number 20240365528
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Changhoon SUNG
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS INCLUDING BACKSIDE WIRING
- Publication number 20240363531
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Soyeon Kim
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING READ ONLY MEMORY (ROM) CELL
- Publication number 20240349497
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Suk YOUN
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...
- Publication number 20240312493
- Publication date Sep 19, 2024
- Samsung Electronics Co., Ltd.
- Youngrok PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240250001
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- HOYOUNG TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACK-SIDE WIRING AND A METHOD OF DESIG...
- Publication number 20240243038
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Eojin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING THROUGH-SILICON VIA AND METHOD OF DESI...
- Publication number 20240128164
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Youngrok Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...
- Publication number 20240120258
- Publication date Apr 11, 2024
- SAMSUNG ELECTYRONICS CO., LTD.
- Taehyung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230162784
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- Jungmyung KANG
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL PORT SRAM CELL AND METHOD OF DESIGNING THE SAME
- Publication number 20230113482
- Publication date Apr 13, 2023
- Samsung Electronics Co., Ltd.
- Eojin LEE
- G11 - INFORMATION STORAGE

Hoyoung Tang

Person

Patents Grantslast 30 patents

Memory device

Dual port SRAM cell and method of designing the same

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT INCLUDING TERNARY CONTENT ADDRESSABLE MEMORY CELL

INTEGRATED CIRCUIT INCLUDING POWER GATING SWITCH

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRES

INTEGRATED CIRCUITS INCLUDING BACKSIDE WIRING

INTEGRATED CIRCUIT INCLUDING READ ONLY MEMORY (ROM) CELL

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT INCLUDING BACK-SIDE WIRING AND A METHOD OF DESIG...

INTEGRATED CIRCUIT INCLUDING THROUGH-SILICON VIA AND METHOD OF DESI...

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...

MEMORY DEVICE

DUAL PORT SRAM CELL AND METHOD OF DESIGNING THE SAME