Hsi-Mao Hsiao

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method to improve borderless metal line process window for sub-micr...
- Patent number 6,815,337
- Issue date Nov 9, 2004
- Episil Technologies, Inc.
- Hsi Mao Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a lower storage node of a capacitor for dynamic r...
- Patent number 6,329,291
- Issue date Dec 11, 2001
- United Microelectronics Corp.
- Chuan-Fu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductive device
- Patent number 6,291,354
- Issue date Sep 18, 2001
- United Microelectronics Corp.
- Hsi-Mao Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming different types of MOS transistors on a semicond...
- Patent number 6,291,279
- Issue date Sep 18, 2001
- United Microelectronics Corp.
- Hsi-Mao Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an inter-layer dielectric layer
- Patent number 6,281,133
- Issue date Aug 28, 2001
- United Microelectronics Corp.
- Hsi-Mao Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS device using a sacrificial layer and sp...
- Patent number 6,245,626
- Issue date Jun 12, 2001
- United Microelectronics Corp.
- Chun-Lung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating process for polysilicon gate
- Patent number 6,200,886
- Issue date Mar 13, 2001
- United Silicon Incorporated
- Hong-Chen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for gate spacer
- Patent number 6,194,279
- Issue date Feb 27, 2001
- United Silicon Incorporated
- Chun-Lung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene process
- Patent number 6,191,029
- Issue date Feb 20, 2001
- United Silicon Incorporated
- Hsi-Mao Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a shallow trench isolation structure
- Patent number 6,146,971
- Issue date Nov 14, 2000
- United Microelectronics Corp.
- Chun-Lung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lower electrode of capacitor
- Patent number 6,133,091
- Issue date Oct 17, 2000
- United Silicon Inc.
- Tong-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Hsi-Mao Hsiao

Person

Patents Grantslast 30 patents

Method to improve borderless metal line process window for sub-micr...

Method of forming a lower storage node of a capacitor for dynamic r...

Method of fabricating a semiconductive device

Method for forming different types of MOS transistors on a semicond...

Method for forming an inter-layer dielectric layer

Method of fabricating a MOS device using a sacrificial layer and sp...

Fabricating process for polysilicon gate

Fabrication method for gate spacer

Damascene process

Process for forming a shallow trench isolation structure

Method of fabricating a lower electrode of capacitor