Hsiang Hsiang KO

Person

Sinying City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,735,271
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface tension modification using silane with hydrophobic function...
- Patent number 9,698,263
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lai-Wan Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices utilizing partially doped stressor film portions
- Patent number 9,634,119
- Issue date Apr 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step shallow trench isolation (STI) process
- Patent number 9,502,280
- Issue date Nov 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing dark current in image sensors
- Patent number 9,379,275
- Issue date Jun 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Miao-Cheng Liao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device
- Patent number 9,324,863
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface for metal gate integration
- Patent number 9,263,275
- Issue date Feb 16, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jinn-Kwei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface tension modification using silane with hydrophobic function...
- Patent number 9,214,393
- Issue date Dec 15, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lai Wan Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface for metal gate integration
- Patent number 9,105,578
- Issue date Aug 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jinn-Kwei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices utilizing partially doped stressor film porti...
- Patent number 9,064,892
- Issue date Jun 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step shallow trench isolation (STI) process
- Patent number 9,006,070
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene metal gate
- Patent number 8,927,406
- Issue date Jan 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,735,255
- Issue date May 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step shallow trench isolation (STI) process
- Patent number 8,692,299
- Issue date Apr 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a cavity structure and related methods
- Patent number 8,497,183
- Issue date Jul 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- You-Hua Chou
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Stressed semiconductor device and method of manufacturing
- Patent number 8,455,883
- Issue date Jun 4, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Miao-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...
- Publication number 20160190320
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Lai-Wan CHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160181427
- Publication date Jun 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS
- Publication number 20150311314
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-Step Shallow Trench Isolation (STI) Process
- Publication number 20150179502
- Publication date Jun 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FOR METAL GATE INTEGRATION
- Publication number 20140273385
- Publication date Sep 18, 2014
- Jinn-Kwei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FOR METAL GATE INTEGRATION
- Publication number 20140264478
- Publication date Sep 18, 2014
- Taiwan Semiconductor Maufacturing Company, Ltd
- Jinn-Kwei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20140239416
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Damascene Metal Gate
- Publication number 20140191299
- Publication date Jul 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SHALLOW TRENCH ISOLATION (STI) PROCESS
- Publication number 20140179071
- Publication date Jun 26, 2014
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SHALLOW TRENCH ISOLATION (STI) PROCESS
- Publication number 20140054653
- Publication date Feb 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Hao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER CLEANING SYSTEM AND METHOD USING ELECTROLYTIC GAS FOR BACK-EN...
- Publication number 20140007905
- Publication date Jan 9, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ren SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130295739
- Publication date Nov 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...
- Publication number 20130256663
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Lai Wan CHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Reducing Dark Current in Image Sensors
- Publication number 20130193540
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Miao-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Damascene Process
- Publication number 20130069233
- Publication date Mar 21, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- You-Hua Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTI...
- Publication number 20130049101
- Publication date Feb 28, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen Chu HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20120292639
- Publication date Nov 22, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Miao-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices having a cavity structure and related methods
- Publication number 20100255187
- Publication date Oct 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- You-Hua Chou
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Devices having a cavity structure and related methods
- Publication number 20070241459
- Publication date Oct 18, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- You-Hua Chou
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Hsiang Hsiang KO

Person

Patents Grantslast 30 patents

Semiconductor device

Surface tension modification using silane with hydrophobic function...

Semiconductor devices utilizing partially doped stressor film portions

Two-step shallow trench isolation (STI) process

Apparatus and method for reducing dark current in image sensors

Semiconductor device

Interface for metal gate integration

Surface tension modification using silane with hydrophobic function...

Interface for metal gate integration

Semiconductor devices utilizing partially doped stressor film porti...

Two-step shallow trench isolation (STI) process

Dual damascene metal gate

Method of manufacturing semiconductor device

Two-step shallow trench isolation (STI) process

Devices having a cavity structure and related methods

Stressed semiconductor device and method of manufacturing

Patents Applicationslast 30 patents

SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS

Two-Step Shallow Trench Isolation (STI) Process

INTERFACE FOR METAL GATE INTEGRATION

INTERFACE FOR METAL GATE INTEGRATION

Semiconductor device

Dual Damascene Metal Gate

TWO-STEP SHALLOW TRENCH ISOLATION (STI) PROCESS

TWO-STEP SHALLOW TRENCH ISOLATION (STI) PROCESS

WAFER CLEANING SYSTEM AND METHOD USING ELECTROLYTIC GAS FOR BACK-EN...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTION...

Apparatus and Method for Reducing Dark Current in Image Sensors

Reverse Damascene Process

SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTI...

STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

Devices having a cavity structure and related methods

Devices having a cavity structure and related methods