Hsiang-Jen Huang

Person

  • Mohegan Lake, NY, US

Patents Grantslast 30 patents

  • Information Patent Grant

    Reduction of boron diffusivity in pFETs

    • Patent number 7,737,014
    • Issue date Jun 15, 2010
    • International Business Machines Corporation
    • Frederick William Buehrer
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Salicide formation method

    • Patent number 6,916,729
    • Issue date Jul 12, 2005
    • Infineon Technologies AG
    • Sunfei Fang
    • H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

  • Information Patent Application

    Reduction of boron diffusivity in pfets

    • Publication number 20070093030
    • Publication date Apr 26, 2007
    • Frederick William Buehrer
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    Salicide formation method

    • Publication number 20040203229
    • Publication date Oct 14, 2004
    • Sunfei Fang
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    Dual-gate process with CMP

    • Publication number 20030109130
    • Publication date Jun 12, 2003
    • International Business Machines Corporation
    • Hsiang-Jen Huang
    • H01 - BASIC ELECTRIC ELEMENTS