Hsiang-Ting HUNG

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Cascode diode circuit
- Patent number 12,261,594
- Issue date Mar 25, 2025
- FAST SIC SEMICONDUCTOR INCORPORATED
- Fu-Jen Hsu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power transistor module and controlling method thereof
- Patent number 11,489,521
- Issue date Nov 1, 2022
- FAST SIC SEMICONDUCTOR INCORPORATED
- Cheng-Tyng Yen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power transistor module and controlling method thereof
- Patent number 11,190,181
- Issue date Nov 30, 2021
- FAST SIC SEMICONDUCTOR INCORPORATED
- Cheng-Tyng Yen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide semiconductor element and manufacturing method thereof
- Patent number 10,020,368
- Issue date Jul 10, 2018
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field effect transistor
- Patent number 9,685,552
- Issue date Jun 20, 2017
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacture thereof
- Patent number 9,373,713
- Issue date Jun 21, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CASCODE DIODE CIRCUIT
- Publication number 20240429912
- Publication date Dec 26, 2024
- Fast SiC Semiconductor Incorporated
- Fu-Jen HSU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20240347599
- Publication date Oct 17, 2024
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
silicon carbide semiconductor device
- Publication number 20240234569
- Publication date Jul 11, 2024
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
silicon carbide semiconductor device
- Publication number 20240136436
- Publication date Apr 25, 2024
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230387215
- Publication date Nov 30, 2023
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230361209
- Publication date Nov 9, 2023
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230307507
- Publication date Sep 28, 2023
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230307556
- Publication date Sep 28, 2023
- Fast SiC Semiconductor Incorporated
- Fu-Jen HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR MODULE AND CONTROLLING METHOD THEREOF
- Publication number 20210367593
- Publication date Nov 25, 2021
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
POWER TRANSISTOR MODULE AND CONTROLLING METHOD THEREOF
- Publication number 20210242868
- Publication date Aug 5, 2021
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20170207305
- Publication date Jul 20, 2017
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20160141412
- Publication date May 19, 2016
- Hestia Power Inc.
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE FIELD EFFECT TRANSISTOR
- Publication number 20160126346
- Publication date May 5, 2016
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS

Hsiang-Ting HUNG

Person

Patents Grantslast 30 patents

Cascode diode circuit

Power transistor module and controlling method thereof

Power transistor module and controlling method thereof

Silicon carbide semiconductor element and manufacturing method thereof

Silicon carbide field effect transistor

Silicon carbide semiconductor device and method of manufacture thereof

Patents Applicationslast 30 patents

CASCODE DIODE CIRCUIT

Silicon carbide semiconductor device

silicon carbide semiconductor device

silicon carbide semiconductor device

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

POWER TRANSISTOR MODULE AND CONTROLLING METHOD THEREOF

POWER TRANSISTOR MODULE AND CONTROLLING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

SILICON CARBIDE FIELD EFFECT TRANSISTOR