Hsiang-Ying Wang

Person

Chiai, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor device
- Patent number 8,431,460
- Issue date Apr 30, 2013
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal-oxide semiconductor transistors
- Patent number 8,076,210
- Issue date Dec 13, 2011
- United Microelectronics Corp.
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal-oxide semiconductor transistors
- Patent number 8,053,847
- Issue date Nov 8, 2011
- United Microelectronics Corp.
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOS transistor
- Patent number 7,795,101
- Issue date Sep 14, 2010
- United Microelectronics Corp.
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal-oxide semiconductor transistors
- Patent number 7,473,606
- Issue date Jan 6, 2009
- United Microelectronics Corp.
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing metal-oxide-semiconductor transistor
- Patent number 7,435,658
- Issue date Oct 14, 2008
- United Microelectronics Corp.
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOS transistor
- Patent number 7,396,717
- Issue date Jul 8, 2008
- United Microelectronics Corp.
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe MOSFET with an erosion preventing Six1Gey1 layer
- Patent number 7,176,504
- Issue date Feb 13, 2007
- United Microelectronics Corp.
- Huan-Shun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a MOS transistor
- Patent number 7,071,046
- Issue date Jul 4, 2006
- United Microelectronics Corp.
- Neng-Hui Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a junction region of a semiconductor device
- Patent number 7,060,547
- Issue date Jun 13, 2006
- United Microelectronics Corp.
- Yu-Kun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing metal-oxide-semiconductor transistor
- Patent number 6,943,085
- Issue date Sep 13, 2005
- United Microelectronics Corp.
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having reduced source/drain extension sheet resistance
- Patent number 6,815,770
- Issue date Nov 9, 2004
- United Microelectronics Corp.
- Chin-Cheng Chien
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20120299058
- Publication date Nov 29, 2012
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20110159658
- Publication date Jun 30, 2011
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a MOS transistor
- Publication number 20100144110
- Publication date Jun 10, 2010
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20090101894
- Publication date Apr 23, 2009
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a MOS transistor
- Publication number 20080258178
- Publication date Oct 23, 2008
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a MOS transistor
- Publication number 20070238234
- Publication date Oct 11, 2007
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor
- Publication number 20070228464
- Publication date Oct 4, 2007
- Hsiang-Ying Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20070196990
- Publication date Aug 23, 2007
- Tsai-Fu Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating silicon nitride film
- Publication number 20060189167
- Publication date Aug 24, 2006
- Hsiang-Ying Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A MOS TRANSISTOR
- Publication number 20060105511
- Publication date May 18, 2006
- Neng-Hui Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing metal-oxide-semiconductor transistor
- Publication number 20050272213
- Publication date Dec 8, 2005
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a junction region of a semiconductor device
- Publication number 20050164461
- Publication date Jul 28, 2005
- Yu-Kun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing metal-oxide-semiconductor transistor
- Publication number 20050054173
- Publication date Mar 10, 2005
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS

Hsiang-Ying Wang

Person

Patents Grantslast 30 patents

Method for fabricating semiconductor device

Method for fabricating metal-oxide semiconductor transistors

Method for fabricating metal-oxide semiconductor transistors

Method of forming a MOS transistor

Method for fabricating metal-oxide semiconductor transistors

Method of manufacturing metal-oxide-semiconductor transistor

Method of forming a MOS transistor

SiGe MOSFET with an erosion preventing Six1Gey1 layer

Method of manufacturing a MOS transistor

Method for forming a junction region of a semiconductor device

Method of manufacturing metal-oxide-semiconductor transistor

MOS transistor having reduced source/drain extension sheet resistance

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

Method of forming a MOS transistor

METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

Method of forming a MOS transistor

Method of forming a MOS transistor

MOS transistor

METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

Method for fabricating silicon nitride film

METHOD OF MANUFACTURING A MOS TRANSISTOR

Method of manufacturing metal-oxide-semiconductor transistor

Method for forming a junction region of a semiconductor device

Method of manufacturing metal-oxide-semiconductor transistor