Hsiao-Chin TUAN

Person

Jhudong County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming an IC including a varactor with reduced surface...
- Patent number 11,978,810
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FUSI gated device formation
- Patent number 11,823,959
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,710,712
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via design for stacking integrated circuits
- Patent number 11,705,449
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via design for stacking integrated circuits
- Patent number 11,646,308
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integration for HKMG technology
- Patent number 11,302,691
- Issue date Apr 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 11,251,314
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for reducing gate-induced drain leakag...
- Patent number 11,251,286
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FUSI gated device formation
- Patent number 11,133,226
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via design for stacking integrated circuits
- Patent number 11,063,038
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced surface field layer in varactor
- Patent number 11,018,266
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for reducing gate-induced drain leakag...
- Patent number 11,011,619
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via design for stacking integrated circuits
- Patent number 10,964,692
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integration for HKMG technology
- Patent number 10,790,279
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 10,770,598
- Issue date Sep 8, 2020
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Through silicon via design for stacking integrated circuits
- Patent number 10,629,592
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for reducing gate-induced drain leakag...
- Patent number 10,535,752
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integration for HKMG technology
- Patent number 10,510,750
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 10,510,902
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with localized carrier lifetime reduction and...
- Patent number 10,381,259
- Issue date Aug 13, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integration for HKMG technology
- Patent number 10,050,033
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 10,043,919
- Issue date Aug 7, 2018
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
SiC crystalline on Si substrates to allow integration of GaN and Si...
- Patent number 10,014,291
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact for trench MOSFET
- Patent number 9,735,266
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized carrier lifetime reduction
- Patent number 9,698,044
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 9,601,411
- Issue date Mar 21, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and formation thereof
- Patent number 9,437,494
- Issue date Sep 6, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 9,431,107
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and fabricating method thereof
- Patent number 9,236,326
- Issue date Jan 12, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high voltage device
- Patent number 9,224,732
- Issue date Dec 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20240250188
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSI GATED DEVICE FORMATION
- Publication number 20230377992
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230317656
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- JHU-MIN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS
- Publication number 20220302108
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...
- Publication number 20220271146
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20220216169
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- JHU-MIN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSI GATED DEVICE FORMATION
- Publication number 20210384082
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS
- Publication number 20210343707
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20210273119
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY
- Publication number 20200402978
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20200395487
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS
- Publication number 20200243516
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20200127146
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSI GATED DEVICE FORMATION
- Publication number 20200126870
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED GATE FOR AN MV DEVICE
- Publication number 20200105748
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAK...
- Publication number 20200091310
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20200083381
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY
- Publication number 20200051975
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS
- Publication number 20200035672
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...
- Publication number 20190393322
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...
- Publication number 20190371906
- Publication date Dec 5, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS
- Publication number 20190363079
- Publication date Nov 28, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY
- Publication number 20190081041
- Publication date Mar 14, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20180342624
- Publication date Nov 29, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOCALIZED CARRIER LIFETIME REDUCTION AND...
- Publication number 20170271199
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alex KALNITSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20160359052
- Publication date Dec 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20160104660
- Publication date Apr 14, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Alexander KALNITSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF
- Publication number 20150311140
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Alexander KALNITSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI-VERTICAL STRUCTURE HAVING A SIDEWALL IMPLANTATION FOR HIGH VO...
- Publication number 20140284706
- Publication date Sep 25, 2014
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20140273376
- Publication date Sep 18, 2014
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS

Hsiao-Chin TUAN

Person

Patents Grantslast 30 patents

Method for forming an IC including a varactor with reduced surface...

FUSI gated device formation

Semiconductor device and manufacturing method of the same

Through silicon via design for stacking integrated circuits

Through silicon via design for stacking integrated circuits

High voltage integration for HKMG technology

Memory devices and methods of manufacture thereof

Method and related apparatus for reducing gate-induced drain leakag...

FUSI gated device formation

Through silicon via design for stacking integrated circuits

Reduced surface field layer in varactor

Method and related apparatus for reducing gate-induced drain leakag...

Through silicon via design for stacking integrated circuits

High voltage integration for HKMG technology

Memory devices and methods of manufacture thereof

Through silicon via design for stacking integrated circuits

Method and related apparatus for reducing gate-induced drain leakag...

High voltage integration for HKMG technology

Memory devices and methods of manufacture thereof

Semiconductor device with localized carrier lifetime reduction and...

High voltage integration for HKMG technology

Memory devices and methods of manufacture thereof

SiC crystalline on Si substrates to allow integration of GaN and Si...

Self-aligned contact for trench MOSFET

Localized carrier lifetime reduction

Semiconductor structure

Semiconductor arrangement and formation thereof

Memory devices and methods of manufacture thereof

Semiconductor structure and fabricating method thereof

Method of forming high voltage device

Patents Applicationslast 30 patents

REDUCED SURFACE FIELD LAYER IN VARACTOR

FUSI GATED DEVICE FORMATION

SEMICONDUCTOR DEVICE

THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS

METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

FUSI GATED DEVICE FORMATION

THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS

REDUCED SURFACE FIELD LAYER IN VARACTOR

HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY

Memory Devices and Methods of Manufacture Thereof

THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS

REDUCED SURFACE FIELD LAYER IN VARACTOR

FUSI GATED DEVICE FORMATION

RECESSED GATE FOR AN MV DEVICE

A METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAK...

Memory Devices and Methods of Manufacture Thereof

HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY

THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS

METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...

METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAG...

THROUGH SILICON VIA DESIGN FOR STACKING INTEGRATED CIRCUITS

HIGH VOLTAGE INTEGRATION FOR HKMG TECHNOLOGY

Memory Devices and Methods of Manufacture Thereof

SEMICONDUCTOR DEVICE WITH LOCALIZED CARRIER LIFETIME REDUCTION AND...

Memory Devices and Methods of Manufacture Thereof

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF

QUASI-VERTICAL STRUCTURE HAVING A SIDEWALL IMPLANTATION FOR HIGH VO...

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF