Hsiao-Chin Tuan

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming self-aligned contact with liner
- Patent number 6,306,759
- Issue date Oct 23, 2001
- Vanguard International Semiconductor Corporation
- Tzu-Shih Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-reflection oxynitride film for polysilicon substrates
- Patent number 6,221,558
- Issue date Apr 24, 2001
- Vanguard International Semiconductor Corporation
- Liang-Gi Yao
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Post chemical mechanical polishing, clean procedure, used for fabri...
- Patent number 6,010,942
- Issue date Jan 4, 2000
- Vanguard International Semiconductor Corporation
- Rong-Wu Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer polysilicon capacitor node DRAM process
- Patent number 5,840,605
- Issue date Nov 24, 1998
- Industrial Technology Research Institute
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method to produce pit-free polysilicon buffer local oxi...
- Patent number 5,429,714
- Issue date Jul 4, 1995
- Etron Technology Inc.
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing low leakage and long retention time DRAM
- Patent number 5,395,784
- Issue date Mar 7, 1995
- Industrial Technology Research Institute
- Chih-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon undercut process for stack DRAM
- Patent number 5,374,577
- Issue date Dec 20, 1994
- Industrial Technology Research Institute
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method to produce pit-free polysilicon buffer local oxi...
- Patent number 5,338,750
- Issue date Aug 16, 1994
- Industrial Technology Research Institute
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dram peripheral circuit contact aspect ratio improvement process
- Patent number 5,270,243
- Issue date Dec 14, 1993
- Industrial Technology Research Institute
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a roughened surface capacitor
- Patent number 5,266,514
- Issue date Nov 30, 1993
- Industrial Technology Research Institute
- Hsiao-Chin Tuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified field isolation process with no channel-stop implant encro...
- Patent number 5,196,367
- Issue date Mar 23, 1993
- Industrial Technology Research Institute
- Chih-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS

Hsiao-Chin Tuan

Person

Patents Grantslast 30 patents

Method for forming self-aligned contact with liner

Anti-reflection oxynitride film for polysilicon substrates

Post chemical mechanical polishing, clean procedure, used for fabri...

Dual layer polysilicon capacitor node DRAM process

Fabrication method to produce pit-free polysilicon buffer local oxi...

Method of manufacturing low leakage and long retention time DRAM

Polysilicon undercut process for stack DRAM

Fabrication method to produce pit-free polysilicon buffer local oxi...

Dram peripheral circuit contact aspect ratio improvement process

Method for producing a roughened surface capacitor

Modified field isolation process with no channel-stop implant encro...