Hsiao-Hui Tseng

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Metal-insulator-metal device capacitance enhancement
- Patent number 12,261,196
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lu-Sheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer trench capacitor structure
- Patent number 12,243,907
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 12,211,876
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,154,927
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 12,087,801
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High capacitance MIM device with self aligned spacer
- Patent number 11,984,353
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,948,949
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer trench capacitor structure
- Patent number 11,916,100
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side illuminated image sensor with reduced sidewall-induced le...
- Patent number 11,901,396
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 11,728,366
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side illuminated image sensor with reduced sidewall-induced le...
- Patent number 11,476,295
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor image sensor device having d...
- Patent number 11,430,823
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,404,460
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 11,227,889
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 11,217,621
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device separate by device isolation
- Patent number 10,910,420
- Issue date Feb 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor image sensor device with deep trench isolations and m...
- Patent number 10,825,853
- Issue date Nov 3, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming image sensor device structure with doping layer...
- Patent number 10,777,590
- Issue date Sep 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device separated by device isolation
- Patent number 10,734,423
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side illuminated image sensor with reduced sidewall-induced le...
- Patent number 10,566,378
- Issue date Feb 18, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 10,510,789
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor device structure with doping layer in light-sensing re...
- Patent number 10,475,828
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device separated by device isolation
- Patent number 10,468,441
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-side deep trench isolation (BDTI) structure for pinned photodi...
- Patent number 10,304,886
- Issue date May 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 10,276,618
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device separated by device isolation
- Patent number 10,141,358
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming alignment marks and structure of same
- Patent number 10,074,612
- Issue date Sep 11, 2018
- Taiwan Semiconductor Manufacturing Company
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation fabrication for BSI image sensor
- Patent number 10,062,720
- Issue date Aug 28, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 9,954,022
- Issue date Apr 24, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor and method for forming the same
- Patent number 9,887,234
- Issue date Feb 6, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LE...
- Publication number 20240421177
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME
- Publication number 20240363671
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20240204016
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER TRENCH CAPACITOR STRUCTURE
- Publication number 20240153987
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE CONTACT IN WAFER BACKSIDE
- Publication number 20240145498
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hao-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRUCIFORM BONDING STRUCTURE FOR 3D-IC
- Publication number 20240128216
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hao-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER
- Publication number 20230377957
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20230335572
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL DEVICE CAPACITANCE ENHANCEMENT
- Publication number 20230307492
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lu-Sheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER TRENCH CAPACITOR STRUCTURE
- Publication number 20230032620
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20220352223
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220352218
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- YEN-TING CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER
- Publication number 20220246469
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench Isolations and Methods of Forming the Same
- Publication number 20220130888
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20220059583
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20210210534
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Back Side Illuminated Image Sensor with Reduced Sidewall-Induced Le...
- Publication number 20210143208
- Publication date May 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR IMAGE SENSOR DEVICE
- Publication number 20210043664
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YEN-TING CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device Separate by Device Isolation
- Publication number 20200365634
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Back Side Illuminated Image Sensor with Reduced Sidewall-Induced Le...
- Publication number 20200144325
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuang-Ji Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20200066770
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device Separated by Device Isolation
- Publication number 20200066774
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING IMAGE SENSOR DEVICE STRUCTURE WITH DOPING LAYER...
- Publication number 20200035723
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20190214414
- Publication date Jul 11, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR DEVICE STRUCTURE WITH DOPING LAYER IN LIGHT-SENSING RE...
- Publication number 20190157319
- Publication date May 23, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20190139997
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- YEN-TING CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device Separated by Device Isolation
- Publication number 20190096937
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-SIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR PINNED PHOTODI...
- Publication number 20190096929
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20180204862
- Publication date Jul 19, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench Isolations and Methods of Forming the Same
- Publication number 20170373117
- Publication date Dec 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS

Hsiao-Hui Tseng

Person

Patents Grantslast 30 patents

Metal-insulator-metal device capacitance enhancement

Multi-layer trench capacitor structure

Extra doped region for back-side deep trench isolation

Semiconductor structure

Deep trench isolations and methods of forming the same

High capacitance MIM device with self aligned spacer

Vertical gate field effect transistor

Multi-layer trench capacitor structure

Back side illuminated image sensor with reduced sidewall-induced le...

Extra doped region for back-side deep trench isolation

Back side illuminated image sensor with reduced sidewall-induced le...

Method for manufacturing semiconductor image sensor device having d...

Vertical gate field effect transistor

Extra doped region for back-side deep trench isolation

Deep trench isolations and methods of forming the same

Semiconductor switching device separate by device isolation

Semiconductor image sensor device with deep trench isolations and m...

Method for forming image sensor device structure with doping layer...

Semiconductor switching device separated by device isolation

Back side illuminated image sensor with reduced sidewall-induced le...

Extra doped region for back-side deep trench isolation

Image sensor device structure with doping layer in light-sensing re...

Semiconductor switching device separated by device isolation

Back-side deep trench isolation (BDTI) structure for pinned photodi...

Extra doped region for back-side deep trench isolation

Semiconductor switching device separated by device isolation

Method for forming alignment marks and structure of same

Deep trench isolation fabrication for BSI image sensor

Extra doped region for back-side deep trench isolation

CMOS image sensor and method for forming the same

Patents Applicationslast 30 patents

BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LE...

DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME

VERTICAL GATE FIELD EFFECT TRANSISTOR

MULTI-LAYER TRENCH CAPACITOR STRUCTURE

SUBSTRATE CONTACT IN WAFER BACKSIDE

CRUCIFORM BONDING STRUCTURE FOR 3D-IC

HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

METAL-INSULATOR-METAL DEVICE CAPACITANCE ENHANCEMENT

MULTI-LAYER TRENCH CAPACITOR STRUCTURE

VERTICAL GATE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR STRUCTURE

HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER

Deep Trench Isolations and Methods of Forming the Same

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

VERTICAL GATE FIELD EFFECT TRANSISTOR

Back Side Illuminated Image Sensor with Reduced Sidewall-Induced Le...

METHOD FOR MANUFACTURING SEMICONDUCTOR IMAGE SENSOR DEVICE

Semiconductor Switching Device Separate by Device Isolation

Back Side Illuminated Image Sensor with Reduced Sidewall-Induced Le...

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

Semiconductor Switching Device Separated by Device Isolation

METHOD FOR FORMING IMAGE SENSOR DEVICE STRUCTURE WITH DOPING LAYER...

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

IMAGE SENSOR DEVICE STRUCTURE WITH DOPING LAYER IN LIGHT-SENSING RE...

SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE...

Semiconductor Switching Device Separated by Device Isolation

BACK-SIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR PINNED PHOTODI...

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

Deep Trench Isolations and Methods of Forming the Same