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Hsiao Wei Chang
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Fremont, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Ultrahigh selective nitride etch to form FinFET devices
Patent number
11,469,079
Issue date
Oct 11, 2022
Lam Research Corporation
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma apparatus for high aspect ratio selective lateral etch using...
Patent number
11,011,388
Issue date
May 18, 2021
Lam Research Corporation
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High aspect ratio selective lateral etch using cyclic passivation a...
Patent number
10,276,398
Issue date
Apr 30, 2019
Lam Research Corporation
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
Publication number
20230084901
Publication date
Mar 16, 2023
LAM RESEARCH CORPORATION
Kwame EASON
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...
Publication number
20190206697
Publication date
Jul 4, 2019
LAM RESEARCH CORPORATION
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION A...
Publication number
20190043732
Publication date
Feb 7, 2019
LAM RESEARCH CORPORATION
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
Publication number
20180269070
Publication date
Sep 20, 2018
LAM RESEARCH CORPORATION
Kwame Eason
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of Post Etch Polymer Residue Removal
Publication number
20120115332
Publication date
May 10, 2012
LAM RESEARCH CORPORATION
Seokmin Yun
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of post etch polymer residue removal
Publication number
20090211596
Publication date
Aug 27, 2009
LAM RESEARCH CORPORATION
Seokmin Yun
H01 - BASIC ELECTRIC ELEMENTS