Hsing-Jen C. Wann

Person

Carmel, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective silicon-on-insulator isolation structure and method
- Patent number 7,923,786
- Issue date Apr 12, 2011
- International Business Machines Corporation
- An L. Steegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon-on-insulator isolation structure and method
- Patent number 7,326,983
- Issue date Feb 5, 2008
- International Business Machines Corporation
- An L. Steegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced dielectric constant spacer materials integration for high s...
- Patent number 7,081,393
- Issue date Jul 25, 2006
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET gate structure with metal gate electrode and silicide contact
- Patent number 7,056,794
- Issue date Jun 6, 2006
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming FET silicide gate structures incorporating inner...
- Patent number 6,974,736
- Issue date Dec 13, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuits having linear and cellular gate transistors
- Patent number 6,975,133
- Issue date Dec 13, 2005
- International Business Machines Corporation
- Victor Wing Chung Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon-on-insulator isolation structure and method
- Patent number 6,936,522
- Issue date Aug 30, 2005
- International Business Machines Corporation
- An L. Steegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of controlling short-channel effect of very sh...
- Patent number 6,653,686
- Issue date Nov 25, 2003
- International Business Machines Corporation
- Hsing-Jen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned buried insulator
- Patent number 6,429,091
- Issue date Aug 6, 2002
- International Business Machines Corporation
- Bomy A. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned deep trench isolation to shallow trench isolation
- Patent number 6,297,127
- Issue date Oct 2, 2001
- International Business Machines Corporation
- Bomy A. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming steep lateral doping distribution at source/drain junctions
- Patent number 6,268,640
- Issue date Jul 31, 2001
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device having shallow junctions includ...
- Patent number 6,025,242
- Issue date Feb 15, 2000
- International Business Machines Corporation
- William Hsioh-Lien Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device having shallow junctions and si...
- Patent number 6,022,771
- Issue date Feb 8, 2000
- International Business Machines Corporation
- William Hsioh-Lien Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device having shallow junctions with t...
- Patent number 5,998,248
- Issue date Dec 7, 1999
- International Business Machines Corporation
- William Hsioh-Lien Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device having shallow junctions
- Patent number 5,998,273
- Issue date Dec 7, 1999
- International Business Machines Corporation
- William Hsioh-Lien Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE SILICON-ON-INSULATOR ISOLATION STRUCTURE AND METHOD
- Publication number 20080029818
- Publication date Feb 7, 2008
- An L. Steegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUITS HAVING LINEAR AND CELLULAR GATE TRANSISTORS
- Publication number 20050264320
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Victor Wing Chung Chan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
REDUCED DIELECTRIC CONSTANT SPACER MATERIALS INTEGRATION FOR HIGH S...
- Publication number 20050260819
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective silicon-on-insulator isolation structure and method
- Publication number 20050164468
- Publication date Jul 28, 2005
- An L. Steegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET GATE STRUCTURE WITH METAL GATE ELECTRODE AND SILICIDE CONTACT
- Publication number 20050153530
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FET SILICIDE GATE STRUCTURES INCORPORATING INNER...
- Publication number 20050153494
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON-ON-INSULATOR ISOLATION STRUCTURE AND METHOD
- Publication number 20040262695
- Publication date Dec 30, 2004
- International Business Machines Corporation
- An L. Steegan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of controlling short-channel effect of very sh...
- Publication number 20040033665
- Publication date Feb 19, 2004
- HSING-JEN WANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterned buried insulator
- Publication number 20020072206
- Publication date Jun 13, 2002
- IBM
- Bomy A. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF CONTROLLING SHORT-CHANNEL EFFECT OF VERY SH...
- Publication number 20020056873
- Publication date May 16, 2002
- HSING-JEN WANN
- H01 - BASIC ELECTRIC ELEMENTS

Hsing-Jen C. Wann

Person

Patents Grantslast 30 patents

Selective silicon-on-insulator isolation structure and method

Selective silicon-on-insulator isolation structure and method

Reduced dielectric constant spacer materials integration for high s...

FET gate structure with metal gate electrode and silicide contact

Method of forming FET silicide gate structures incorporating inner...

Logic circuits having linear and cellular gate transistors

Selective silicon-on-insulator isolation structure and method

Structure and method of controlling short-channel effect of very sh...

Patterned buried insulator

Self-aligned deep trench isolation to shallow trench isolation

Forming steep lateral doping distribution at source/drain junctions

Fabrication of semiconductor device having shallow junctions includ...

Fabrication of semiconductor device having shallow junctions and si...

Fabrication of semiconductor device having shallow junctions with t...

Fabrication of semiconductor device having shallow junctions

Patents Applicationslast 30 patents

SELECTIVE SILICON-ON-INSULATOR ISOLATION STRUCTURE AND METHOD

LOGIC CIRCUITS HAVING LINEAR AND CELLULAR GATE TRANSISTORS

REDUCED DIELECTRIC CONSTANT SPACER MATERIALS INTEGRATION FOR HIGH S...

Selective silicon-on-insulator isolation structure and method

FET GATE STRUCTURE WITH METAL GATE ELECTRODE AND SILICIDE CONTACT

METHOD OF FORMING FET SILICIDE GATE STRUCTURES INCORPORATING INNER...

SELECTIVE SILICON-ON-INSULATOR ISOLATION STRUCTURE AND METHOD

Structure and method of controlling short-channel effect of very sh...

Patterned buried insulator

STRUCTURE AND METHOD OF CONTROLLING SHORT-CHANNEL EFFECT OF VERY SH...