Hsiu-Hao Tsao

Person

Taichung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate formation of semiconductor devices
- Patent number 12,198,988
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 12,068,398
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,033,895
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device fabrication and structures thereof
- Patent number 11,996,468
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,961,919
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 11,735,651
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 11,664,444
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation of semiconductor devices
- Patent number 11,574,846
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 11,437,498
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a transistor gate by non-directional impl...
- Patent number 11,398,384
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,282,967
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 10,861,960
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual speed hub, and the related redundant switching method
- Patent number 6,052,805
- Issue date Apr 18, 2000
- D-Link Corporation
- Mei-Yi Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
Gate Formation Of Semiconductor Devices
- Publication number 20250149388
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240321642
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF
- Publication number 20240313090
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240266424
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20230361191
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20230268427
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH MODIFIED SPACER AND METHOD FOR FORMING...
- Publication number 20230187535
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Of Semiconductor Devices
- Publication number 20230187288
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230080290
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD
- Publication number 20220359735
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220351975
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF
- Publication number 20220336639
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20220209023
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210376114
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210249271
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20210202756
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Of Semiconductor Devices
- Publication number 20210183713
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD
- Publication number 20210111272
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS

Hsiu-Hao Tsao

Person

Patents Grantslast 30 patents

Gate formation of semiconductor devices

Fin field-effect transistor with void and method of forming the same

Semiconductor devices and methods of manufacturing thereof

Multi-gate device fabrication and structures thereof

Nanostructure field-effect transistor device and method of forming

FinFET device and method

Fin field-effect transistor with void and method of forming the same

Gate formation of semiconductor devices

FinFET device and method

Methods for manufacturing a transistor gate by non-directional impl...

Nanostructure field-effect transistor device and method of forming

FinFET device and method

Dual speed hub, and the related redundant switching method

Patents Applicationslast 30 patents

Gate Formation Of Semiconductor Devices

SEMICONDUCTOR DEVICES

Fin Field-Effect Transistor With Void and Method of Forming The Same

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

Fin Field-Effect Transistor With Void and Method of Forming The Same

SEMICONDUCTOR STRUCTURE WITH MODIFIED SPACER AND METHOD FOR FORMING...

Gate Formation Of Semiconductor Devices

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

FINFET DEVICE AND METHOD

Semiconductor Device and Method

MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF

Nanostructure Field-Effect Transistor Device and Method of Forming

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Semiconductor Device and Method

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

Gate Formation Of Semiconductor Devices

FINFET DEVICE AND METHOD