Hsiu-Wen Huang

Person

Kaohsiung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating an isolation structure in an integrated circuit
- Patent number 6,255,191
- Issue date Jul 3, 2001
- United Microelectronics Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a dynamic random access memory capacitor
- Patent number 6,204,108
- Issue date Mar 20, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM capacitor
- Patent number 6,187,629
- Issue date Feb 13, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple well structure
- Patent number 6,111,283
- Issue date Aug 29, 2000
- United Semiconductor Corp.
- Johnny Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bit line
- Patent number 6,087,260
- Issue date Jul 11, 2000
- United Semiconductor Corp.
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing capacitor's lower electrode
- Patent number 6,080,633
- Issue date Jun 27, 2000
- United Semiconductor Corp.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing MOS transistor
- Patent number 5,972,764
- Issue date Oct 26, 1999
- United Semiconductor Corp.
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of nitride-sealed oxide-buffered local oxidation of silicon
- Patent number 5,970,364
- Issue date Oct 19, 1999
- United Semiconductor Circuit Corp.
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a rugged polysilicon fin structure in DRAM
- Patent number 5,851,878
- Issue date Dec 22, 1998
- United Microelectronics Corporation
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bit line of a dynamic random access memory
- Patent number 5,780,337
- Issue date Jul 14, 1998
- United Microelectronics Corporation
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supplementary implantation method for fabricating twin gate CMOS
- Patent number 5,723,357
- Issue date Mar 3, 1998
- United Microelectronics Corporation
- Hsiu-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating an isolation structure in an integrated circuit
- Publication number 20010026993
- Publication date Oct 4, 2001
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS

Hsiu-Wen Huang

Person

Patents Grantslast 30 patents

Method of fabricating an isolation structure in an integrated circuit

Method of fabricating a dynamic random access memory capacitor

Method of fabricating a DRAM capacitor

Triple well structure

Method of manufacturing bit line

Method for manufacturing capacitor's lower electrode

Method for manufacturing MOS transistor

Method of nitride-sealed oxide-buffered local oxidation of silicon

Method of forming a rugged polysilicon fin structure in DRAM

Method of fabricating a bit line of a dynamic random access memory

Supplementary implantation method for fabricating twin gate CMOS

Patents Applicationslast 30 patents

Method of fabricating an isolation structure in an integrated circuit