Hsueh-Chih Chou

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure
- Patent number 11,664,383
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsueh-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and manufacturing method of the same
- Patent number 11,456,380
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a vertical power MOS transistor
- Patent number 11,424,244
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,037,957
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsueh-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for power MOS transistor
- Patent number 11,031,495
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology and structure for field plate design
- Patent number 10,964,810
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a vertical power MOS transistor
- Patent number 10,840,246
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS device with dummy gate
- Patent number 10,727,334
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 10,685,982
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsueh-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for power MOS transistor
- Patent number 10,686,065
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field structure and methodology
- Patent number 10,680,100
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology and structure for field plate design
- Patent number 10,636,904
- Issue date Apr 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET
- Patent number 10,510,880
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS device with dummy gate
- Patent number 10,453,955
- Issue date Oct 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a vertical power MOS transistor
- Patent number 10,304,829
- Issue date May 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode device and manufacturing method thereof
- Patent number 10,205,037
- Issue date Feb 12, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuichiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and methods for forming the same
- Patent number 10,170,589
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for power MOS transistor
- Patent number 10,164,085
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and methods of forming the same
- Patent number 10,141,421
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET
- Patent number 10,109,732
- Issue date Oct 23, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,103,285
- Issue date Oct 16, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wen-Shun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with trench field plate
- Patent number 10,090,390
- Issue date Oct 2, 2018
- Taiwan Semiconductor Manufacturing Company
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for power MOS transistor
- Patent number 10,050,126
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology and structure for field plate design
- Patent number 9,954,097
- Issue date Apr 24, 2018
- Taiwan Seminconductor Manufacturing Co., Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and methods for forming the same
- Patent number 9,905,674
- Issue date Feb 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and methods of forming the same
- Patent number 9,892,974
- Issue date Feb 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS device with dummy gate
- Patent number 9,871,133
- Issue date Jan 16, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a vertical power MOS transistor
- Patent number 9,825,035
- Issue date Nov 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with trench field plate
- Patent number 9,698,227
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and methods of forming the same
- Patent number 9,673,297
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench Isolation Connectors for Stacked Structures
- Publication number 20230377949
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Jyun Syue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20220359750
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- TUNG-YANG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210280608
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HSUEH-CHIH CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Vertical Power MOS Transistor
- Publication number 20210057412
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20200286919
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- HSUEH-CHIH CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Power MOS Transistor
- Publication number 20200273982
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral DMOS Device with Dummy Gate
- Publication number 20200035826
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
- Publication number 20200020802
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STRUCTURE AND METHODOLOGY
- Publication number 20200013888
- Publication date Jan 9, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Having Drain Region Formed Between Two Gate Electrodes with...
- Publication number 20200006489
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Vertical Power MOS Transistor
- Publication number 20190267377
- Publication date Aug 29, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20190164992
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- HSUEH-CHIH CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Power MOS Transistor
- Publication number 20190109229
- Publication date Apr 11, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Power MOSFET
- Publication number 20190051745
- Publication date Feb 14, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180358488
- Publication date Dec 13, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- YUICHIRO YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180301583
- Publication date Oct 18, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- WEN-SHUN LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180277677
- Publication date Sep 27, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- TUNG-YANG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
- Publication number 20180219093
- Publication date Aug 2, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power MOSFET and Methods for Forming the Same
- Publication number 20180175168
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Vertical Power MOS Transistor
- Publication number 20180151569
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral DMOS Device with Dummy Gate
- Publication number 20180138312
- Publication date May 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with Trench Field Plate
- Publication number 20170301762
- Publication date Oct 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power MOSFET and Methods of Forming the Same
- Publication number 20170271480
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Having Source Region Formed in a Double Wells Region
- Publication number 20170250252
- Publication date Aug 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Power MOS Transistor
- Publication number 20170222023
- Publication date Aug 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Power MOS Transistor
- Publication number 20170194483
- Publication date Jul 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
- Publication number 20170148911
- Publication date May 25, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Vertical Power MOS Transistor
- Publication number 20170133374
- Publication date May 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral DMOS Device with Dummy Gate
- Publication number 20170005193
- Publication date Jan 5, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Power MOSFET
- Publication number 20160351691
- Publication date Dec 1, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wai Ng
- H01 - BASIC ELECTRIC ELEMENTS

Hsueh-Chih Chou

Person

Patents Grantslast 30 patents

Semiconductor structure

Transistor structure and manufacturing method of the same

Integrated circuit having a vertical power MOS transistor

Semiconductor structure

Apparatus and method for power MOS transistor

Methodology and structure for field plate design

Integrated circuit having a vertical power MOS transistor

Lateral DMOS device with dummy gate

Semiconductor structure

Apparatus and method for power MOS transistor

Field structure and methodology

Methodology and structure for field plate design

Trench power MOSFET

Lateral DMOS device with dummy gate

Integrated circuit having a vertical power MOS transistor

Photodiode device and manufacturing method thereof

Vertical power MOSFET and methods for forming the same

Apparatus and method for power MOS transistor

Vertical power MOSFET and methods of forming the same

Trench power MOSFET

Semiconductor device and method of manufacturing the same

FinFET with trench field plate

Apparatus and method for power MOS transistor

Methodology and structure for field plate design

Vertical power MOSFET and methods for forming the same

Vertical power MOSFET and methods of forming the same

Lateral DMOS device with dummy gate

Integrated circuit having a vertical power MOS transistor

FinFET with trench field plate

Vertical power MOSFET and methods of forming the same

Patents Applicationslast 30 patents

Trench Isolation Connectors for Stacked Structures

TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR STRUCTURE

Integrated Circuit Having a Vertical Power MOS Transistor

SEMICONDUCTOR STRUCTURE

Apparatus and Method for Power MOS Transistor

Lateral DMOS Device with Dummy Gate

METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN

FIELD STRUCTURE AND METHODOLOGY

MOSFET Having Drain Region Formed Between Two Gate Electrodes with...

Integrated Circuit Having a Vertical Power MOS Transistor

SEMICONDUCTOR STRUCTURE

Apparatus and Method for Power MOS Transistor

Trench Power MOSFET

PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN

Vertical Power MOSFET and Methods for Forming the Same

Integrated Circuit Having a Vertical Power MOS Transistor

Lateral DMOS Device with Dummy Gate

FinFET with Trench Field Plate

Vertical Power MOSFET and Methods of Forming the Same

MOSFET Having Source Region Formed in a Double Wells Region

Apparatus and Method for Power MOS Transistor

Apparatus and Method for Power MOS Transistor

METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN

Integrated Circuit Having a Vertical Power MOS Transistor

Lateral DMOS Device with Dummy Gate

Trench Power MOSFET