Hsueh-Hsing Liu

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Jhongli City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Growth method for reducing defect density of gallium nitride
- Patent number 8,679,881
- Issue date Mar 25, 2014
- Tekcore Co., Ltd.
- Jen-Inn Chyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element having high breakdown voltage
- Patent number 8,586,995
- Issue date Nov 19, 2013
- National Central University
- Jen-Inn Chyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing semipolar nitride
- Patent number 8,524,583
- Issue date Sep 3, 2013
- National Central University
- Jen-Inn Chyi
- C30 - CRYSTAL GROWTH
Information Patent Grant
LED structure
- Patent number 8,237,174
- Issue date Aug 7, 2012
- National Central University
- Peng-Ren Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating single-crystalline substrate containing gall...
- Patent number 8,048,786
- Issue date Nov 1, 2011
- National Central University
- Jen-Inn Chyi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR ELEMENT HAVING HIGH BREAKDOWN VOLTAGE
- Publication number 20130240895
- Publication date Sep 19, 2013
- Jen-Inn CHYI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING SEMIPOLAR NITRIDE
- Publication number 20120276722
- Publication date Nov 1, 2012
- Jen-Inn CHYI
- C30 - CRYSTAL GROWTH
Information Patent Application
LED STRUCTURE
- Publication number 20110272719
- Publication date Nov 10, 2011
- Peng-Ren Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMI-POLAR NITRIDE SEMICONDUCTOR
- Publication number 20110045658
- Publication date Feb 24, 2011
- Hsueh-hsing LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Fabricating Single-Crystalline Substrate Containing Gall...
- Publication number 20100068872
- Publication date Mar 18, 2010
- Jen-Inn Chyi
- C30 - CRYSTAL GROWTH