Hsueh-Rong Chang

Person

Scotia, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Protective metal silicate coating for electrodeless HID lamps
- Patent number 5,866,983
- Issue date Feb 2, 1999
- General Electric Company
- Svante Prochazka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of silver and nickel silicide to control iodine level in electr...
- Patent number 5,438,244
- Issue date Aug 1, 1995
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrodeless fluorescent lamp with optimized amalgam positioning
- Patent number 5,434,482
- Issue date Jul 18, 1995
- General Electric Company
- Joseph C. Borowiec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a magnetic field to locate an amalgam in an electrodeless flu...
- Patent number 5,412,289
- Issue date May 2, 1995
- General Electric Company
- Robert J. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iodine getter for a high intensity metal halide discharge lamp
- Patent number 5,343,118
- Issue date Aug 30, 1994
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer oxide coating for high intensity metal halide discharge...
- Patent number 5,270,615
- Issue date Dec 14, 1993
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multicellular FET having a Schottky diode merged therewith
- Patent number 5,111,253
- Issue date May 5, 1992
- General Electric Company
- Charles S. Korman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled diode (FCD) having MOS trench gates
- Patent number 4,994,883
- Issue date Feb 19, 1991
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with improved latch-up current le...
- Patent number 4,994,871
- Issue date Feb 19, 1991
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate structure with thick bottom oxide
- Patent number 4,992,390
- Issue date Feb 12, 1991
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power rectifier with trenches
- Patent number 4,982,260
- Issue date Jan 1, 1991
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor gated turn-off thyristor having an interl...
- Patent number 4,963,950
- Issue date Oct 16, 1990
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional field effect semiconductor device and circuit
- Patent number 4,961,100
- Issue date Oct 2, 1990
- General Electric Company
- Bantval J. Baliga
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Lateral depletion mode tyristor
- Patent number 4,942,445
- Issue date Jul 17, 1990
- General Electric Company
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise, high frequency synchronous rectifier
- Patent number 4,903,189
- Issue date Feb 20, 1990
- General Electric Company
- Khai D. T. Ngo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Vertical double diffused metal oxide semiconductor (VDMOS) device i...
- Patent number 4,823,176
- Issue date Apr 18, 1989
- General Electric Company
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical double diffused metal oxide semiconductor VDMOS device wit...
- Patent number 4,801,986
- Issue date Jan 31, 1989
- General Electric Company
- Hsueh-Rong Chang
- H01 - BASIC ELECTRIC ELEMENTS

Hsueh-Rong Chang

Person

Patents Grantslast 30 patents

Protective metal silicate coating for electrodeless HID lamps

Use of silver and nickel silicide to control iodine level in electr...

Electrodeless fluorescent lamp with optimized amalgam positioning

Using a magnetic field to locate an amalgam in an electrodeless flu...

Iodine getter for a high intensity metal halide discharge lamp

Multi-layer oxide coating for high intensity metal halide discharge...

Multicellular FET having a Schottky diode merged therewith

Field controlled diode (FCD) having MOS trench gates

Insulated gate bipolar transistor with improved latch-up current le...

Trench gate structure with thick bottom oxide

Power rectifier with trenches

Metal oxide semiconductor gated turn-off thyristor having an interl...

Bidirectional field effect semiconductor device and circuit

Lateral depletion mode tyristor

Low noise, high frequency synchronous rectifier

Vertical double diffused metal oxide semiconductor (VDMOS) device i...

Vertical double diffused metal oxide semiconductor VDMOS device wit...