Hsun Chang

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Hsin-Chu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Source/drain carbon implant and RTA anneal, pre-SiGe deposition
- Patent number 8,404,546
- Issue date Mar 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yen Woon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing dopant activation without suffering additional...
- Patent number 8,273,633
- Issue date Sep 25, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Keh-Chiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain carbon implant and RTA anneal, pre-SiGe deposition
- Patent number 7,838,887
- Issue date Nov 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yen Woon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ultra-shallow and highly activated sour...
- Patent number 7,741,699
- Issue date Jun 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced activation approach for MOS devices
- Patent number 7,494,857
- Issue date Feb 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition
- Publication number 20110027955
- Publication date Feb 3, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yen Woon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition
- Publication number 20090273034
- Publication date Nov 5, 2009
- Wei-Yen Woon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING DOPANT ACTIVATION WITHOUT SUFFERING ADDITIONAL...
- Publication number 20080242039
- Publication date Oct 2, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced activation approach for MOS devices
- Publication number 20080160709
- Publication date Jul 3, 2008
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction leakage reduction in SiGe process by tilt implantation
- Publication number 20070298557
- Publication date Dec 27, 2007
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-shallow and highly activated source/drain extension formation...
- Publication number 20070284615
- Publication date Dec 13, 2007
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS