Hsun-Chung Kuang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-doped data storage structure configured to improve resistive...
- Patent number 12,232,434
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming bottom electrode via for memory device
- Patent number 12,191,250
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhen Yu Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM MTJ with directly coupled top electrode connection
- Patent number 12,185,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chau Chen
Information Patent Grant
Integrated aligned stealth laser for wafer edge trimming process
- Patent number 12,183,571
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Tung Wu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Wakeup free approach to improve the ferroelectricity of FeRAM using...
- Patent number 12,160,995
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 12,137,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structure along image sensor element to mitigate damage to...
- Patent number 12,132,066
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Kai Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped sidewall spacer/etch stop layer for memory
- Patent number 12,127,483
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Bond pad structure for bonding improvement
- Patent number 12,113,090
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Wei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ CMP self-assembled monolayer for enhancing metal-dielectric...
- Patent number 12,107,004
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhen Yu Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 12,075,626
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,075,636
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random access memory device with seed layer
- Patent number 12,069,867
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface film to mitigate size effect of memory device
- Patent number 12,035,537
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure, capacitor structure and electronic device
- Patent number 11,967,611
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated aligned stealth laser with blade and grinding apparatus...
- Patent number 11,901,171
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Tung Wu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,895,933
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
Techniques to inhibit delamination from flowable gap-fill dielectric
- Patent number 11,887,929
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bond pad structure for bonding improvement
- Patent number 11,869,916
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Wei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrate rinse module in hybrid bonding platform
- Patent number 11,854,795
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xin-Hua Huang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 11,856,801
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-oxidation layer to prevent dielectric loss from planarization...
- Patent number 11,854,822
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhen Yu Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM with laminated ferroelectric film and method forming same
- Patent number 11,844,226
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ CMP self-assembled monolayer for enhancing metal-dielectric...
- Patent number 11,810,817
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhen Yu Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conditioner disk, chemical mechanical polishing device, and method
- Patent number 11,787,012
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsien Hua Shen
- B24 - GRINDING POLISHING
Information Patent Grant
Wakeup free approach to improve the ferroelectricity of FeRAM using...
- Patent number 11,737,280
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 11,723,212
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...
- Publication number 20250048645
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240404877
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsai-Ming HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240381663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Memory Device and Method of Manufacturing the Same
- Publication number 20240381664
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING STRUCTURE ALONG IMAGE SENSOR ELEMENT TO MITIGATE DAMAGE TO...
- Publication number 20240371907
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Kai Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY
- Publication number 20240373760
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20240357835
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOND PAD STRUCTURE FOR BONDING IMPROVEMENT
- Publication number 20240355864
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Wei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER
- Publication number 20240334709
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES TO INHIBIT DELAMINATION FROM FLOWABLE GAP-FILL DIELECTRIC
- Publication number 20240186238
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS
- Publication number 20240136174
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Tung Wu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20240138272
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION...
- Publication number 20240087906
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhen Yu Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATE RINSE MODULE IN HYBRID BONDING PLATFORM
- Publication number 20240087879
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xin-Hua Huang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240074217
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
FeRAM with Laminated Ferroelectric Film and Method Forming Same
- Publication number 20240064998
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDITIONER DISK, CHEMICAL MECHANICAL POLISHING DEVICE, AND METHOD
- Publication number 20240025014
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien Hua Shen
- B24 - GRINDING POLISHING
Information Patent Application
MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...
- Publication number 20240021700
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240023344
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF
- Publication number 20230402487
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE
- Publication number 20230387190
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU CMP SELF-ASSEMBLED MONOLAYER FOR ENHANCING METAL-DIELECTRIC...
- Publication number 20230377959
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhen Yu GUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOND PAD STRUCTURE FOR BONDING IMPROVEMENT
- Publication number 20230378225
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Wei Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20230371288
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230354717
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- BI-SHEN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...
- Publication number 20230354613
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20230320103
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING BOTTOM ELECTRODE VIA FOR MEMORY DEVICE
- Publication number 20230238318
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhen Yu Guan
- G11 - INFORMATION STORAGE

Hsun-Chung Kuang

Person

Patents Grantslast 30 patents

Threshold voltage-modulated memory device using variable-capacitanc...

Multi-doped data storage structure configured to improve resistive...

Method of forming bottom electrode via for memory device

MRAM MTJ with directly coupled top electrode connection

Integrated aligned stealth laser for wafer edge trimming process

Wakeup free approach to improve the ferroelectricity of FeRAM using...

Ferroelectric memory device and method of manufacturing the same

Capping structure along image sensor element to mitigate damage to...

Doped sidewall spacer/etch stop layer for memory

Bond pad structure for bonding improvement

In-situ CMP self-assembled monolayer for enhancing metal-dielectric...

Memory window of MFM MOSFET for small cell size

Threshold voltage-modulated memory device using variable-capacitanc...

Ferroelectric random access memory device with seed layer

Interface film to mitigate size effect of memory device

Multilayer structure, capacitor structure and electronic device

Circuit design and layout with high embedded memory density

Multi-layer electrode to improve performance of ferroelectric memor...

Integrated aligned stealth laser with blade and grinding apparatus...

Resistive memory cell with switching layer comprising one or more d...

Techniques to inhibit delamination from flowable gap-fill dielectric

Bond pad structure for bonding improvement

Integrate rinse module in hybrid bonding platform

Threshold voltage-modulated memory device using variable-capacitanc...

Anti-oxidation layer to prevent dielectric loss from planarization...

FeRAM with laminated ferroelectric film and method forming same

In-situ CMP self-assembled monolayer for enhancing metal-dielectric...

Conditioner disk, chemical mechanical polishing device, and method

Wakeup free approach to improve the ferroelectricity of FeRAM using...

Memory window of MFM MOSFET for small cell size

Patents Applicationslast 30 patents

WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

Ferroelectric Memory Device and Method of Manufacturing the Same

CAPPING STRUCTURE ALONG IMAGE SENSOR ELEMENT TO MITIGATE DAMAGE TO...

DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY

IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE WITH SEED LAYER

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

TECHNIQUES TO INHIBIT DELAMINATION FROM FLOWABLE GAP-FILL DIELECTRIC

INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION...

INTEGRATE RINSE MODULE IN HYBRID BONDING PLATFORM

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

FeRAM with Laminated Ferroelectric Film and Method Forming Same

CONDITIONER DISK, CHEMICAL MECHANICAL POLISHING DEVICE, AND METHOD

MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF

MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

IN-SITU CMP SELF-ASSEMBLED MONOLAYER FOR ENHANCING METAL-DIELECTRIC...

BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...

MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

METHOD OF FORMING BOTTOM ELECTRODE VIA FOR MEMORY DEVICE