Hua XIANG

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor mask reshaping using a sacrificial layer
- Patent number 12,165,878
- Issue date Dec 10, 2024
- Lam Research Corporation
- Zhongkui Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for determining field non-uniformities of a wafer...
- Patent number 10,763,142
- Issue date Sep 1, 2020
- Lam Research Corporation
- Marcus Musselman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-based deposition for semiconductor processing
- Patent number 10,658,194
- Issue date May 19, 2020
- Lam Research Corporation
- Zhongkui Tan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and systems for plasma etching using bi-modal process gas c...
- Patent number 10,177,003
- Issue date Jan 8, 2019
- Lam Research Corporation
- Zhongkui Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxide silicon nitride stack ion-assisted etch
- Patent number 9,997,366
- Issue date Jun 12, 2018
- Lam Research Corporation
- Zhongkui Tan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Line edge roughness improvement with sidewall sputtering
- Patent number 9,852,924
- Issue date Dec 26, 2017
- Lam Research Corporation
- Zhongkui Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid stair-step etch
- Patent number 9,741,563
- Issue date Aug 22, 2017
- Lam Research Corporation
- Hua Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to etch a tungsten containing layer
- Patent number 9,418,869
- Issue date Aug 16, 2016
- Lam Research Corporation
- Hua Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses for void-free tungsten fill in three-dimens...
- Patent number 9,082,826
- Issue date Jul 14, 2015
- Lam Research Corporation
- Anand Chandrashekar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MASK RESHAPING USING A SACRIFICIAL LAYER
- Publication number 20220076962
- Publication date Mar 10, 2022
- LAM RESEARCH CORPORATION
- Zhongkui Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON OXIDE SILICON NITRIDE STACK ION-ASSISTED ETCH
- Publication number 20180108532
- Publication date Apr 19, 2018
- LAM RESEARCH CORPORATION
- Zhongkui TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-BASED DEPOSITION FOR SEMICONDUCTOR PROCESSING
- Publication number 20180061659
- Publication date Mar 1, 2018
- LAM RESEARCH CORPORATION
- Zhongkui TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID STAIR-STEP ETCH
- Publication number 20170213723
- Publication date Jul 27, 2017
- LAM RESEARCH CORPORATION
- Hua XIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR DETERMINING FIELD NON-UNIFORMITIES OF A WAFER...
- Publication number 20160370796
- Publication date Dec 22, 2016
- LAM RESEARCH CORPORATION
- Marcus Musselman
- G05 - CONTROLLING REGULATING
Information Patent Application
METHOD TO ETCH A TUNGSTEN CONTAINING LAYER
- Publication number 20160035585
- Publication date Feb 4, 2016
- LAM RESEARCH CORPORATION
- Hua XIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES FOR VOID-FREE TUNGSTEN FILL IN THREE-DIMENS...
- Publication number 20140349477
- Publication date Nov 27, 2014
- Anand Chandrashekar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Semiconductor mask reshaping using a sacrificial layer

System and method for determining field non-uniformities of a wafer...

Silicon-based deposition for semiconductor processing

Methods and systems for plasma etching using bi-modal process gas c...

Silicon oxide silicon nitride stack ion-assisted etch

Line edge roughness improvement with sidewall sputtering

Hybrid stair-step etch

Method to etch a tungsten containing layer

Methods and apparatuses for void-free tungsten fill in three-dimens...

Patents Applicationslast 30 patents

SEMICONDUCTOR MASK RESHAPING USING A SACRIFICIAL LAYER

SILICON OXIDE SILICON NITRIDE STACK ION-ASSISTED ETCH

SILICON-BASED DEPOSITION FOR SEMICONDUCTOR PROCESSING

HYBRID STAIR-STEP ETCH

SYSTEM AND METHOD FOR DETERMINING FIELD NON-UNIFORMITIES OF A WAFER...

METHOD TO ETCH A TUNGSTEN CONTAINING LAYER

METHODS AND APPARATUSES FOR VOID-FREE TUNGSTEN FILL IN THREE-DIMENS...