Huadong Gan

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 10,727,400
- Issue date Jul 28, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 10,361,362
- Issue date Jul 23, 2019
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with multilayered seed structure
- Patent number 10,347,691
- Issue date Jul 9, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element including oxide/metal composite layers form...
- Patent number 10,090,456
- Issue date Oct 2, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with perpendicular enhancement layer
- Patent number 10,079,338
- Issue date Sep 18, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic structure with multilayered seed
- Patent number 10,050,083
- Issue date Aug 14, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with iridium anti-ferromagnetic coupling layer
- Patent number 10,032,979
- Issue date Jul 24, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic fixed layer with high anisotropy
- Patent number 10,008,663
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Xiaojie Hao
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbitronics device and applications thereof
- Patent number 10,008,540
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Parviz Keshtbod
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,191
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,190
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite fixed layer
- Patent number 9,831,421
- Issue date Nov 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for perpendicular MTJ memory element
- Patent number 9,793,319
- Issue date Oct 17, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite perpendicular enhancement layer
- Patent number 9,780,300
- Issue date Oct 3, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic memory element having magnesium oxide cap layer
- Patent number 9,748,471
- Issue date Aug 29, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbitronics device and applications thereof
- Patent number 9,647,032
- Issue date May 9, 2017
- Avalanche Technology, Inc.
- Xiaobin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 9,647,202
- Issue date May 9, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular interfacial anisot...
- Patent number 9,634,244
- Issue date Apr 25, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction (MTJ) memory element having tri-layer perp...
- Patent number 9,608,038
- Issue date Mar 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory element having tantalum perpendicular...
- Patent number 9,559,144
- Issue date Jan 31, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with perpendicular enhancement layer and t...
- Patent number 9,548,334
- Issue date Jan 17, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with tri-layer reference layer
- Patent number 9,543,506
- Issue date Jan 10, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with multilayered seed structure
- Patent number 9,496,489
- Issue date Nov 15, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with nickel/transition metal multilay...
- Patent number 9,444,038
- Issue date Sep 13, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-switched magnetic random access memory (MRAM) and method fo...
- Patent number 9,443,577
- Issue date Sep 13, 2016
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with multilayered seed structure
- Patent number 9,419,207
- Issue date Aug 16, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory having perpendicular composite refere...
- Patent number 9,396,781
- Issue date Jul 19, 2016
- Avalanche Technology, Inc.
- Yuchen Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular interfacial anisot...
- Patent number 9,337,417
- Issue date May 10, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 9,306,154
- Issue date Apr 5, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory having perpendicular enhancement laye...
- Patent number 9,231,027
- Issue date Jan 5, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190013461
- Publication date Jan 10, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element with Multilayered Seed Structure
- Publication number 20190006414
- Publication date Jan 3, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20180090675
- Publication date Mar 29, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180083187
- Publication date Mar 22, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180076384
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Random Access Memory with Multilayered Seed Structure
- Publication number 20170352701
- Publication date Dec 7, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170324027
- Publication date Nov 9, 2017
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170288137
- Publication date Oct 5, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF
- Publication number 20170236868
- Publication date Aug 17, 2017
- Avalanche Technology, Inc.
- Parviz Keshtbod
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170162781
- Publication date Jun 8, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170084826
- Publication date Mar 23, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE
- Publication number 20170033156
- Publication date Feb 2, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160284762
- Publication date Sep 29, 2016
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...
- Publication number 20160211443
- Publication date Jul 21, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160204341
- Publication date Jul 14, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF
- Publication number 20160064650
- Publication date Mar 3, 2016
- Avalanche Technology, Inc.
- Xiaobin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE
- Publication number 20150340601
- Publication date Nov 26, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE
- Publication number 20150340599
- Publication date Nov 26, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE
- Publication number 20150340598
- Publication date Nov 26, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-SWITCHED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FO...
- Publication number 20150332748
- Publication date Nov 19, 2015
- AVALANCHE TECHNOLOGY INC.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150325783
- Publication date Nov 12, 2015
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20150311252
- Publication date Oct 29, 2015
- AVALANCHE TECHNOLOGY INC.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20150311431
- Publication date Oct 29, 2015
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150287908
- Publication date Oct 8, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150270311
- Publication date Sep 24, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER
- Publication number 20150194598
- Publication date Jul 9, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150171315
- Publication date Jun 18, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20150102439
- Publication date Apr 16, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...
- Publication number 20150102438
- Publication date Apr 16, 2015
- AVALANCHE TECHNOLOGY INC.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYE...
- Publication number 20150102441
- Publication date Apr 16, 2015
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS

Huadong Gan

Person

Patents Grantslast 30 patents

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with multilayered seed structure

Magnetic memory element including oxide/metal composite layers form...

Magnetic memory element with perpendicular enhancement layer

Magnetic structure with multilayered seed

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Perpendicular magnetic fixed layer with high anisotropy

Spin-orbitronics device and applications thereof

Magnetic random access memory with ultrathin reference layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Multilayered seed structure for perpendicular MTJ memory element

Magnetic memory element with composite perpendicular enhancement layer

Perpendicular magnetic memory element having magnesium oxide cap layer

Spin-orbitronics device and applications thereof

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular interfacial anisot...

Magnetic tunnel junction (MTJ) memory element having tri-layer perp...

Magnetic random access memory element having tantalum perpendicular...

Magnetic tunnel junction with perpendicular enhancement layer and t...

Magnetic random access memory with tri-layer reference layer

Magnetic random access memory with multilayered seed structure

Magnetic random access memory with nickel/transition metal multilay...

Voltage-switched magnetic random access memory (MRAM) and method fo...

Magnetic random access memory with multilayered seed structure

Magnetic random access memory having perpendicular composite refere...

Magnetic random access memory with perpendicular interfacial anisot...

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory having perpendicular enhancement laye...

Patents Applicationslast 30 patents

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Magnetic Memory Element with Multilayered Seed Structure

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Magnetic Random Access Memory with Multilayered Seed Structure

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF

MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

VOLTAGE-SWITCHED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FO...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYE...