Huai-Tei YANG

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Etching apparatus and methods of cleaning thereof
- Patent number 12,080,582
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 12,021,142
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 12,021,143
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 12,015,055
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain multi-layer structure and...
- Patent number 11,990,550
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain structure having modified...
- Patent number 11,973,127
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming
- Patent number 11,854,811
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,817,499
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 11,742,386
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for performing chemical mechanical polishing
- Patent number 11,685,015
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yuan Yang
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon intermixing layer for blocking diffusion
- Patent number 11,587,791
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 11,569,383
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation and in-situ etching processes for metal layers
- Patent number 11,545,363
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain multi-layer structure and...
- Patent number 11,527,655
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacuum systems in semiconductor fabrication facilities
- Patent number 11,525,185
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Fa Wu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Pellicle and method of manufacturing same
- Patent number 11,526,073
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po Hsuan Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 11,450,741
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,404,574
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,398,482
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pellicle and method of manufacturing same
- Patent number 11,340,525
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po Hsuan Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Fully strained channel
- Patent number 11,233,123
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 11,227,951
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching apparatus and methods of cleaning thereof
- Patent number 11,222,805
- Issue date Jan 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EUV collector contamination prevention
- Patent number 11,219,115
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Fa Wu
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Gate structure, semiconductor device and the method of forming semi...
- Patent number 11,195,931
- Issue date Dec 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming
- Patent number 11,004,688
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate process and device
- Patent number 10,971,602
- Issue date Apr 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Shun Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 10,950,694
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain multi-layer structure and...
- Patent number 10,937,910
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS
- Publication number 20240363350
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING APPARATUS AND METHODS OF CLEANING THEREOF
- Publication number 20240355663
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20240266439
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...
- Publication number 20240234548
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20230378359
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping for Semiconductor Device with Conductive Feature
- Publication number 20230352533
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PERFORMING CHEMICAL MECHANICAL POLISHING
- Publication number 20230278160
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yuan YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS
- Publication number 20230141521
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Intermixing Layer for Blocking Diffusion
- Publication number 20230116357
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20230109135
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping for Semiconductor Device with Conductive Feature
- Publication number 20220367632
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20220367715
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vacuum Systems in Semiconductor Fabrication Facilities
- Publication number 20220356567
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Fa Wu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20220352374
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220302116
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pellicle and Method of Manufacturing Same
- Publication number 20220197132
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po Hsuan Li
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Fully Strained Channel
- Publication number 20220149157
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING APPARATUS AND METHODS OF CLEANING THEREOF
- Publication number 20220130706
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING APPARATUS AND METHODS OF CLEANING THEREOF
- Publication number 20210313212
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method of Forming
- Publication number 20210233771
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping for Semiconductor Device with Conductive Feature
- Publication number 20210226008
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20210175359
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20210143278
- Publication date May 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS
- Publication number 20210111027
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pellicle and Method of Manufacturing Same
- Publication number 20210080823
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po Hsuan Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Vacuum Systems in Semiconductor Fabrication Facilities
- Publication number 20210079522
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Fa Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN STRUCTURE HAVING MODIFIED...
- Publication number 20210050433
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure, Semiconductor Device and the Method of Forming Semi...
- Publication number 20200381529
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Huai-Tei YANG

Person

Patents Grantslast 30 patents

Etching apparatus and methods of cleaning thereof

Fully strained channel

Method of forming source/drain epitaxial stacks

P-type strained channel in a fin field effect transistor (FinFET) d...

Doping for semiconductor device with conductive feature

Semiconductor structure with source/drain multi-layer structure and...

Semiconductor structure with source/drain structure having modified...

FinFET device and method of forming

P-type strained channel in a fin field effect transistor (FinFET) d...

Doping for semiconductor device with conductive feature

Method and system for performing chemical mechanical polishing

Silicon intermixing layer for blocking diffusion

Method of forming source/drain epitaxial stacks

Formation and in-situ etching processes for metal layers

Semiconductor structure with source/drain multi-layer structure and...

Vacuum systems in semiconductor fabrication facilities

Pellicle and method of manufacturing same

Doping for semiconductor device with conductive feature

P-type strained channel in a fin field effect transistor (FinFET) d...

Semiconductor device and method

Pellicle and method of manufacturing same

Fully strained channel

Method of forming semiconductor device

Etching apparatus and methods of cleaning thereof

EUV collector contamination prevention

Gate structure, semiconductor device and the method of forming semi...

FinFET device and method of forming

High-k metal gate process and device

Doping for semiconductor device with conductive feature

Semiconductor structure with source/drain multi-layer structure and...

Patents Applicationslast 30 patents

FULLY STRAINED CHANNEL

FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS

ETCHING APPARATUS AND METHODS OF CLEANING THEREOF

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

Doping for Semiconductor Device with Conductive Feature

METHOD AND SYSTEM FOR PERFORMING CHEMICAL MECHANICAL POLISHING

FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS

Silicon Intermixing Layer for Blocking Diffusion

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

Doping for Semiconductor Device with Conductive Feature

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

Vacuum Systems in Semiconductor Fabrication Facilities

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

Semiconductor Device and Method

Pellicle and Method of Manufacturing Same

Fully Strained Channel

ETCHING APPARATUS AND METHODS OF CLEANING THEREOF

ETCHING APPARATUS AND METHODS OF CLEANING THEREOF

FinFET Device and Method of Forming

Doping for Semiconductor Device with Conductive Feature

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

FORMATION AND IN-SITU ETCHING PROCESSES FOR METAL LAYERS

Pellicle and Method of Manufacturing Same

Vacuum Systems in Semiconductor Fabrication Facilities

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN STRUCTURE HAVING MODIFIED...

Gate Structure, Semiconductor Device and the Method of Forming Semi...