Huang-Joung Chen

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Maple Grove, MN, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of making integrated spacer for magnetoresistive RAM
- Patent number 5,569,617
- Issue date Oct 29, 1996
- Honeywell Inc.
- Tangshiun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly producible magnetoresistive RAM process
- Patent number 5,496,759
- Issue date Mar 5, 1996
- Honeywell Inc.
- Jerry Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making planarized, self-aligned bipolar integrated circuits
- Patent number 5,008,208
- Issue date Apr 16, 1991
- Honeywell Inc.
- Michael S. Liu
- H01 - BASIC ELECTRIC ELEMENTS