Huanlong Liu

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,573,270
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 11,563,170
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,054,471
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and circuits for programming STT-MRAM cells for reducing bac...
- Patent number 10,978,124
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,957,851
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Initialization process for magnetic random access memory (MRAM) pro...
- Patent number 10,867,651
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and circuits for programming STT-MRAM cells for reducing ba...
- Patent number 10,699,765
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride capping layer for spin torque transfer (STT)-magnetoresisti...
- Patent number 10,665,773
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,522,745
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,522,747
- Issue date Dec 31, 2019
- TAIWAN SEMICONDUCTOR MANUFACUTING COMPANY, LTD.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,522,752
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 10,522,744
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 10,509,074
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,431,736
- Issue date Oct 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Initialization process for magnetic random access memory (MRAM) pro...
- Patent number 10,325,639
- Issue date Jun 18, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,230,044
- Issue date Mar 12, 2019
- Headway Technologies, Inc.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,014,465
- Issue date Jul 3, 2018
- Headway Technologies, Inc.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 9,842,988
- Issue date Dec 12, 2017
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Implementation of a one time programmable memory using a MRAM stack...
- Patent number 9,805,816
- Issue date Oct 31, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20210325460
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Reduction of Barrier Resistance X Area (RA) Product and Protection...
- Publication number 20210234092
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...
- Publication number 20200327918
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20200144487
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20200144494
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20200116790
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190311754
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20190257881
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...
- Publication number 20190237661
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20190189910
- Publication date Jun 20, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20190189911
- Publication date Jun 20, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190156876
- Publication date May 23, 2019
- HEADWAY TECHNOLOGIES, INC.
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20190109277
- Publication date Apr 11, 2019
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...
- Publication number 20180358071
- Publication date Dec 13, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20180323371
- Publication date Nov 8, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20180175287
- Publication date Jun 21, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20180026179
- Publication date Jan 25, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE

Huanlong Liu

Person

Patents Grantslast 30 patents

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Magnetic tunnel junction with low defect rate after high temperatur...

Electrical testing apparatus for spintronics devices

Method and circuits for programming STT-MRAM cells for reducing bac...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Initialization process for magnetic random access memory (MRAM) pro...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Magnetic tunnel junction with low defect rate after high temperatur...

Methods and circuits for programming STT-MRAM cells for reducing ba...

Nitride capping layer for spin torque transfer (STT)-magnetoresisti...

Maintaining coercive field after high temperature anneal for magnet...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Fully compensated synthetic ferromagnet for spintronics applications

Magnetic layer for magnetic random access memory (MRAM) by moment e...

High thermal stability by doping of oxide capping layer for spin to...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Initialization process for magnetic random access memory (MRAM) pro...

Fully compensated synthetic ferromagnet for spintronics applications

Multilayer structure for reducing film roughness in magnetic devices

Maintaining coercive field after high temperature anneal for magnet...

Magnetic tunnel junction with low defect rate after high temperatur...

Implementation of a one time programmable memory using a MRAM stack...

Patents Applicationslast 30 patents

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Electrical Testing Apparatus for Spintronics Devices

Reduction of Barrier Resistance X Area (RA) Product and Protection...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Electrical Testing Apparatus for Spintronics Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...

Electrical Testing Apparatus for Spintronics Devices

Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications