Huaqiang Wu

Person

Burlingame, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
HTO offset for long leffective, better device performance
- Patent number 9,455,352
- Issue date Sep 27, 2016
- Cypress Semiconductor Corporation
- Ning Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Oro and orpro with bit line trench to suppress transport program di...
- Patent number 9,245,895
- Issue date Jan 26, 2016
- Cypress Semiconductor Corporation
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HTO offset for long Leffective, better device performance
- Patent number 8,653,581
- Issue date Feb 18, 2014
- Spansion LLC
- Ning Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate replacement with top oxide regrowth for the top oxide improvement
- Patent number 8,455,268
- Issue date Jun 4, 2013
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial nitride and gate replacement
- Patent number 8,329,598
- Issue date Dec 11, 2012
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HTO offset and BL trench process for memory device to improve devic...
- Patent number 8,330,209
- Issue date Dec 11, 2012
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split charge storage node outer spacer process
- Patent number 8,039,891
- Issue date Oct 18, 2011
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ORO and ORPRO with bit line trench to suppress transport program di...
- Patent number 8,012,830
- Issue date Sep 6, 2011
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial nitride and gate replacement
- Patent number 7,981,745
- Issue date Jul 19, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HTO offset spacers and dip off process to define junction
- Patent number 7,943,983
- Issue date May 17, 2011
- Spansion LLC
- Huaqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HTO offset and BL trench process for memory device to improve devic...
- Patent number 7,935,596
- Issue date May 3, 2011
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a polymer spacer and Si trench in a bitline junction of a fl...
- Patent number 7,906,807
- Issue date Mar 15, 2011
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split charge storage node outer spacer process
- Patent number 7,883,963
- Issue date Feb 8, 2011
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN bulk growth by Ga vapor transport
- Patent number 7,867,335
- Issue date Jan 11, 2011
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Split charge storage node inner spacer process
- Patent number 7,829,936
- Issue date Nov 9, 2010
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple poly-si replacement scheme for memory devices
- Patent number 7,807,580
- Issue date Oct 5, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a polymer spacer and Si trench in a bitline junction of a fl...
- Patent number 7,776,688
- Issue date Aug 17, 2010
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride coatings and methods
- Patent number 7,772,288
- Issue date Aug 10, 2010
- Cornell Research Foundation, Inc.
- Huaqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compositions
- Patent number 7,569,206
- Issue date Aug 4, 2009
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of making Group III nitrides
- Patent number 7,381,391
- Issue date Jun 3, 2008
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE
- Publication number 20140167138
- Publication date Jun 19, 2014
- SPANSION LLC
- Ning Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...
- Publication number 20110278660
- Publication date Nov 17, 2011
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL NITRIDE AND GATE REPLACEMENT
- Publication number 20110237060
- Publication date Sep 29, 2011
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVIC...
- Publication number 20110169069
- Publication date Jul 14, 2011
- SPANSION, LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS
- Publication number 20110095355
- Publication date Apr 28, 2011
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FL...
- Publication number 20100264480
- Publication date Oct 21, 2010
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HTO OFFSET SPACERS AND DIP OFF PROCESS TO DEFINE JUNCTION
- Publication number 20100155785
- Publication date Jun 24, 2010
- SPANSION LLC
- Huaqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVIC...
- Publication number 20100155816
- Publication date Jun 24, 2010
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE
- Publication number 20100155817
- Publication date Jun 24, 2010
- SPANSION LLC
- Ning Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS
- Publication number 20090108330
- Publication date Apr 30, 2009
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS
- Publication number 20090101963
- Publication date Apr 23, 2009
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL NITRIDE AND GATE REPLACEMENT
- Publication number 20090061650
- Publication date Mar 5, 2009
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT
- Publication number 20090061631
- Publication date Mar 5, 2009
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FL...
- Publication number 20090042378
- Publication date Feb 12, 2009
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...
- Publication number 20090039405
- Publication date Feb 12, 2009
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compositions
- Publication number 20080274030
- Publication date Nov 6, 2008
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C30 - CRYSTAL GROWTH
Information Patent Application
TRIPLE POLY-SI REPLACEMENT SCHEME FOR MEMORY DEVICES
- Publication number 20080268650
- Publication date Oct 30, 2008
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride coatings and methods
- Publication number 20080050857
- Publication date Feb 28, 2008
- Huaqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making Group III nitrides
- Publication number 20070248526
- Publication date Oct 25, 2007
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN bulk growth by Ga vapor transport
- Publication number 20070178671
- Publication date Aug 2, 2007
- Cornell Research Foundation, Inc.
- Michael G. Spencer
- C30 - CRYSTAL GROWTH

Huaqiang Wu

Person

Patents Grantslast 30 patents

HTO offset for long leffective, better device performance

Oro and orpro with bit line trench to suppress transport program di...

HTO offset for long Leffective, better device performance

Gate replacement with top oxide regrowth for the top oxide improvement

Sacrificial nitride and gate replacement

HTO offset and BL trench process for memory device to improve devic...

Split charge storage node outer spacer process

ORO and ORPRO with bit line trench to suppress transport program di...

Sacrificial nitride and gate replacement

HTO offset spacers and dip off process to define junction

HTO offset and BL trench process for memory device to improve devic...

Use of a polymer spacer and Si trench in a bitline junction of a fl...

Split charge storage node outer spacer process

GaN bulk growth by Ga vapor transport

Split charge storage node inner spacer process

Triple poly-si replacement scheme for memory devices

Use of a polymer spacer and Si trench in a bitline junction of a fl...

Group III nitride coatings and methods

Group III nitride compositions

Method of making Group III nitrides

Patents Applicationslast 30 patents

HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE

ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...

SACRIFICIAL NITRIDE AND GATE REPLACEMENT

HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVIC...

SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS

USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FL...

HTO OFFSET SPACERS AND DIP OFF PROCESS TO DEFINE JUNCTION

HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVIC...

HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE

SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS

SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS

SACRIFICIAL NITRIDE AND GATE REPLACEMENT

GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT

USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FL...

ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...

Group III nitride compositions

TRIPLE POLY-SI REPLACEMENT SCHEME FOR MEMORY DEVICES

Group III nitride coatings and methods

Method of making Group III nitrides

GaN bulk growth by Ga vapor transport