Hui Chen

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South Jordan, UT, US

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Patents Grantslast 30 patents

Information Patent Grant
Technique for controlling trench profile in semiconductor structures
- Patent number 8,815,744
- Issue date Aug 26, 2014
- Fairchild Semiconductor Corporation
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for controlling trench profile in semiconductor structures
- Patent number 8,772,169
- Issue date Jul 8, 2014
- Fairchild Semiconductor Corporation
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio trench structures with void-free fill material
- Patent number 8,198,196
- Issue date Jun 12, 2012
- Fairchild Semiconductor Corporation
- James J. Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming hybrid substrate
- Patent number 8,039,401
- Issue date Oct 18, 2011
- Fairchild Semiconductor Corporation
- Qi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trenches with wide upper portion and narrow lowe...
- Patent number 8,003,522
- Issue date Aug 23, 2011
- Fairchild Semiconductor Corporation
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio trench structures with void-free fill material
- Patent number 7,956,411
- Issue date Jun 7, 2011
- Fairchild Semiconductor Corporation
- James J. Murphy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDU...
- Publication number 20140264569
- Publication date Sep 18, 2014
- Fairchild Semiconductor Corporation
- Joseph A. YEDINAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO TRENCH STRUCTURES WITH VOID-FREE FILL MATERIAL
- Publication number 20120142155
- Publication date Jun 7, 2012
- JAMES J. MURPHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO TRENCH STRUCTURES WITH VOID-FREE FILL MATERIAL
- Publication number 20100044785
- Publication date Feb 25, 2010
- JAMES J. MURPHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Trenches with Wide Upper Portion and Narrow Lowe...
- Publication number 20100003823
- Publication date Jan 7, 2010
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Forming Hybrid Substrate
- Publication number 20090302482
- Publication date Dec 10, 2009
- Qi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for Controlling Trench Profile in Semiconductor Structures
- Publication number 20090269896
- Publication date Oct 29, 2009
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS