Hui Ouyang

Person

Chubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming a semiconductor device by thermally treating a c...
- Patent number 9,799,523
- Issue date Oct 24, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui OuYang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with well controlled surface proximity an...
- Patent number 9,349,831
- Issue date May 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End-cut first approach for critical dimension control
- Patent number 9,196,491
- Issue date Nov 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Te S. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device
- Patent number 9,159,582
- Issue date Oct 13, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui OuYang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with well controlled surface proximity an...
- Patent number 8,900,960
- Issue date Dec 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,658,525
- Issue date Feb 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with well controlled surface proximity an...
- Patent number 8,614,132
- Issue date Dec 24, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate electrode using a treated hard mask
- Patent number 8,569,185
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End-cut first approach for critical dimension control
- Patent number 8,563,410
- Issue date Oct 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Te S. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain feature profile for improving device performance
- Patent number 8,445,940
- Issue date May 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing dummy poly in a gate last process
- Patent number 8,415,254
- Issue date Apr 9, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,367,563
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,361,855
- Issue date Jan 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating epitaxial structures
- Patent number 8,357,574
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsi Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified profile gate structure for semiconductor device and method...
- Patent number 8,329,546
- Issue date Dec 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming metal gate transistors
- Patent number 8,268,085
- Issue date Sep 18, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain feature profile for improving device performance a...
- Patent number 8,236,659
- Issue date Aug 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing integrated circuit device with well control...
- Patent number 8,216,906
- Issue date Jul 10, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate electrode using a treated hard mask
- Patent number 8,173,504
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling gate thickness in forming FinFET devices
- Patent number 8,114,721
- Issue date Feb 14, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun Wu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,048,733
- Issue date Nov 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via structures and trench structures and dual damascene structures
- Patent number 7,436,009
- Issue date Oct 14, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via hole and trench structures and fabrication methods thereof and...
- Patent number 7,217,663
- Issue date May 15, 2007
- Taiwan Semiconductor Manufacturing Company
- Yi-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Forming A Semiconductor Device
- Publication number 20160035575
- Publication date Feb 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui OuYang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...
- Publication number 20140106522
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
End-Cut First Approach For Critical Dimension Control
- Publication number 20140106479
- Publication date Apr 17, 2014
- Li-Te S. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Device with Well Controlled Surface Proximity an...
- Publication number 20130323891
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for a Gate Replacement Process
- Publication number 20130149821
- Publication date Jun 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...
- Publication number 20120273847
- Publication date Nov 1, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING EPITAXIAL STRUCTURES
- Publication number 20120094448
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsi YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...
- Publication number 20120083088
- Publication date Apr 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsuan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED PROFILE GATE STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD...
- Publication number 20120049247
- Publication date Mar 1, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20120018817
- Publication date Jan 26, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...
- Publication number 20120001238
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN FEATURE PROFILE FOR IMPROVING DEVICE PERFORMANCE A...
- Publication number 20110312145
- Publication date Dec 22, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK
- Publication number 20110250725
- Publication date Oct 13, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK
- Publication number 20110195548
- Publication date Aug 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES
- Publication number 20110143510
- Publication date Jun 16, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun Wu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
END-CUT FIRST APPROACH FOR CRITICAL DIMENSION CONTROL
- Publication number 20110124134
- Publication date May 26, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Te S. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20110086502
- Publication date Apr 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR A GATE REPLACEMENT PROCESS
- Publication number 20110081774
- Publication date Apr 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING METAL GATE TRANSISTORS
- Publication number 20100240204
- Publication date Sep 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS
- Publication number 20100124823
- Publication date May 20, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a Semiconductor Device
- Publication number 20090117750
- Publication date May 7, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- Hui OuYang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via structures and trench structures and dual damascene structures
- Publication number 20070184669
- Publication date Aug 9, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial-via-first dual-damascene process with tri-layer resist appr...
- Publication number 20070134917
- Publication date Jun 14, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Chun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reworking low-k dual damascene photo resist
- Publication number 20070004193
- Publication date Jan 4, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsang-Jiuh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via hole and trench structures and fabrication methods thereof and...
- Publication number 20060160362
- Publication date Jul 20, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of forming a semiconductor device by thermally treating a c...

Integrated circuit device with well controlled surface proximity an...

End-cut first approach for critical dimension control

Methods of forming a semiconductor device

Integrated circuit device with well controlled surface proximity an...

Methods for a gate replacement process

Integrated circuit device with well controlled surface proximity an...

Method of fabricating gate electrode using a treated hard mask

End-cut first approach for critical dimension control

Source and drain feature profile for improving device performance

Method for removing dummy poly in a gate last process

Methods for a gate replacement process

Method for fabricating a gate structure

Method of fabricating epitaxial structures

Modified profile gate structure for semiconductor device and method...

Methods for forming metal gate transistors

Source and drain feature profile for improving device performance a...

Method of manufacturing integrated circuit device with well control...

Method of fabricating gate electrode using a treated hard mask

Method of controlling gate thickness in forming FinFET devices

Method for fabricating a gate structure

Via structures and trench structures and dual damascene structures

Via hole and trench structures and fabrication methods thereof and...

Patents Applicationslast 30 patents

Methods of Forming A Semiconductor Device

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...

End-Cut First Approach For Critical Dimension Control

Integrated Circuit Device with Well Controlled Surface Proximity an...

Methods for a Gate Replacement Process

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...

METHOD OF FABRICATING EPITAXIAL STRUCTURES

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...

MODIFIED PROFILE GATE STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD...

METHOD FOR FABRICATING A GATE STRUCTURE

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...

SOURCE AND DRAIN FEATURE PROFILE FOR IMPROVING DEVICE PERFORMANCE A...

METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK

METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK

METHOD OF CONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES

END-CUT FIRST APPROACH FOR CRITICAL DIMENSION CONTROL

METHOD FOR FABRICATING A GATE STRUCTURE

METHODS FOR A GATE REPLACEMENT PROCESS

METHODS FOR FORMING METAL GATE TRANSISTORS

NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS

Methods of Forming a Semiconductor Device

Via structures and trench structures and dual damascene structures

Partial-via-first dual-damascene process with tri-layer resist appr...

Method for reworking low-k dual damascene photo resist

Via hole and trench structures and fabrication methods thereof and...