Huicong Hong

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Crystalline gallium nitride containing flourine
- Patent number 10,208,396
- Issue date Feb 19, 2019
- Soraa, Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a gallium nitride crystalline composition having a...
- Patent number 9,279,193
- Issue date Mar 8, 2016
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride crystal and method of making same
- Patent number 8,357,945
- Issue date Jan 22, 2013
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystalline composition, wafer, device, and associated method
- Patent number 7,859,008
- Issue date Dec 28, 2010
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride crystals and wafers and method of making
- Patent number 7,786,503
- Issue date Aug 31, 2010
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for processing materials in supercritical fluids and meth...
- Patent number 7,704,324
- Issue date Apr 27, 2010
- General Electric Company
- Mark Philip D'Evelyn
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for forming nitride crystals
- Patent number 7,642,122
- Issue date Jan 5, 2010
- Momentive Performance Materials Inc.
- Steven Alfred Tysoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystalline composition, wafer, and semi-conductor structure
- Patent number 7,638,815
- Issue date Dec 29, 2009
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant cavity light emitting devices and associated method
- Patent number 7,582,498
- Issue date Sep 1, 2009
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for producing single crystal and quasi-single crystal, an...
- Patent number 7,368,015
- Issue date May 6, 2008
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium nitride crystal and method of making same
- Patent number 7,098,487
- Issue date Aug 29, 2006
- General Electric Company
- Mark Philip D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride crystals and wafers and method of making
- Patent number 7,078,731
- Issue date Jul 18, 2006
- General Electric Company
- Mark Philip D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride based resonant cavity light emitting devices fabr...
- Patent number 7,009,215
- Issue date Mar 7, 2006
- General Electric Company
- Mark Philip D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER
- Publication number 20190249328
- Publication date Aug 15, 2019
- Soraa, Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER
- Publication number 20160319457
- Publication date Nov 3, 2016
- Momentive Performance Materials Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER
- Publication number 20120017825
- Publication date Jan 26, 2012
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for forming nitride crystals
- Publication number 20080087919
- Publication date Apr 17, 2008
- Steven Alfred Tysoe
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD
- Publication number 20080006844
- Publication date Jan 10, 2008
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE
- Publication number 20080008855
- Publication date Jan 10, 2008
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride crystal and method of making same
- Publication number 20070215887
- Publication date Sep 20, 2007
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
- Publication number 20070158785
- Publication date Jul 12, 2007
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystalline composition, wafer, and semi-conductor structure
- Publication number 20070040181
- Publication date Feb 22, 2007
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for processing materials in supercritical fluids and meth...
- Publication number 20060177362
- Publication date Aug 10, 2006
- Mark Philip D'Evelyn
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Crystalline composition, wafer, and semi-conductor structure
- Publication number 20060169996
- Publication date Aug 3, 2006
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Resonant cavity light emitting devices and associated method
- Publication number 20060118799
- Publication date Jun 8, 2006
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing single crystal and quasi-single crystal, an...
- Publication number 20060048699
- Publication date Mar 9, 2006
- GENERAL ELECTRIC COMPANY
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride crystals and wafers and method of making
- Publication number 20050098095
- Publication date May 12, 2005
- General Electric Company
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-nitride based resonant cavity light emitting devices fabr...
- Publication number 20050087753
- Publication date Apr 28, 2005
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride crystal and method of making same
- Publication number 20040124434
- Publication date Jul 1, 2004
- General Electric Company
- Mark Phillip D'Evelyn
- C30 - CRYSTAL GROWTH

Huicong Hong

Person

Patents Grantslast 30 patents

Crystalline gallium nitride containing flourine

Method of making a gallium nitride crystalline composition having a...

Gallium nitride crystal and method of making same

Crystalline composition, wafer, device, and associated method

Gallium nitride crystals and wafers and method of making

Apparatus for processing materials in supercritical fluids and meth...

Method for forming nitride crystals

Crystalline composition, wafer, and semi-conductor structure

Resonant cavity light emitting devices and associated method

Apparatus for producing single crystal and quasi-single crystal, an...

Gallium nitride crystal and method of making same

Gallium nitride crystals and wafers and method of making

Group III-nitride based resonant cavity light emitting devices fabr...

Patents Applicationslast 30 patents

METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER

METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER

METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER

Method for forming nitride crystals

CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD

CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE

Gallium nitride crystal and method of making same

GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING

Crystalline composition, wafer, and semi-conductor structure

Apparatus for processing materials in supercritical fluids and meth...

Crystalline composition, wafer, and semi-conductor structure

Resonant cavity light emitting devices and associated method

Apparatus for producing single crystal and quasi-single crystal, an...

Gallium nitride crystals and wafers and method of making

Group III-nitride based resonant cavity light emitting devices fabr...

Gallium nitride crystal and method of making same