Huiwen Xu

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory cell containing an in-cell resistor
- Patent number 8,879,299
- Issue date Nov 4, 2014
- Sandisk 3D LLC
- Kun Hou
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for increased array feature density
- Patent number 8,658,526
- Issue date Feb 25, 2014
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for increasing memory density using diode lay...
- Patent number 8,633,528
- Issue date Jan 21, 2014
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode diffusions in two-terminal non-volatile memory devices
- Patent number 8,592,793
- Issue date Nov 26, 2013
- Sandisk 3D LLC
- Xiying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-based interface layer for a memory device and methods of for...
- Patent number 8,569,730
- Issue date Oct 29, 2013
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a carbon-based memory element and methods...
- Patent number 8,557,685
- Issue date Oct 15, 2013
- Sandisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell that includes a carbon-based reversible resistance swit...
- Patent number 8,551,855
- Issue date Oct 8, 2013
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a carbon-based reversible resistance swit...
- Patent number 8,481,396
- Issue date Jul 9, 2013
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation of resistivity in carbon-based read-writeable materials
- Patent number 8,470,646
- Issue date Jun 25, 2013
- Sandisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with carbon switching material having a reduced cross-s...
- Patent number 8,471,360
- Issue date Jun 25, 2013
- Sandisk 3D LLC
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene integration methods for graphitic films in three-dimensio...
- Patent number 8,467,224
- Issue date Jun 18, 2013
- Sandisk 3D LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that includes a carbon-based memory element and methods...
- Patent number 8,466,044
- Issue date Jun 18, 2013
- Sandisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to minimize wet etch undercuts and provide pore sealing of e...
- Patent number 8,445,075
- Issue date May 21, 2013
- Applied Materials, Inc.
- Huiwen Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electronic devices including carbon nano-tube films having carbon-b...
- Patent number 8,421,050
- Issue date Apr 16, 2013
- Sandisk 3D LLC
- Er-Xuan Ping
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for increased array feature density
- Patent number 8,372,740
- Issue date Feb 12, 2013
- SanDisk 3D, LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for increasing memory density using diode lay...
- Patent number 8,309,415
- Issue date Nov 13, 2012
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with silicon-containing carbon switching layer and meth...
- Patent number 8,237,146
- Issue date Aug 7, 2012
- Sandisk 3D LLC
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increased array feature density
- Patent number 8,114,765
- Issue date Feb 14, 2012
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration methods for carbon films in two- and three-dimensional...
- Patent number 8,093,123
- Issue date Jan 10, 2012
- Sandisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to obtain low k dielectric barrier with superior etch resis...
- Patent number 7,964,442
- Issue date Jun 21, 2011
- Applied Materials, Inc.
- Huiwen Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a two-terminal non-volatile memory pillar device w...
- Patent number 7,955,981
- Issue date Jun 7, 2011
- Sandisk 3D LLC
- Xiying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to mitigate impact of UV and E-beam exposure on semiconducto...
- Patent number 7,851,384
- Issue date Dec 14, 2010
- Applied Materials, Inc.
- Yijun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel nonvolatile memory device containing a carbon storage ma...
- Patent number 7,830,698
- Issue date Nov 9, 2010
- Sandisk 3D LLC
- Xiying Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
In-situ oxide capping after CVD low k deposition
- Patent number 7,112,541
- Issue date Sep 26, 2006
- Applied Materials, Inc.
- Li-Qun Xia
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHI...
- Publication number 20140252298
- Publication date Sep 11, 2014
- SanDisk 3D LLC
- Yubao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAY...
- Publication number 20130313503
- Publication date Nov 28, 2013
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INCREASED ARRAY FEATURE DENSITY
- Publication number 20130183829
- Publication date Jul 18, 2013
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cell Containing an In-Cell Resistor
- Publication number 20130094278
- Publication date Apr 18, 2013
- SanDisk 3D LLC
- Kun Hou
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR INCREASED ARRAY FEATURE DENSITY
- Publication number 20120135603
- Publication date May 31, 2012
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIA...
- Publication number 20110278529
- Publication date Nov 17, 2011
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-S...
- Publication number 20110254126
- Publication date Oct 20, 2011
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices
- Publication number 20110204313
- Publication date Aug 25, 2011
- SANDISK 3D LLC
- Xiying CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METH...
- Publication number 20110204474
- Publication date Aug 25, 2011
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWIT...
- Publication number 20110095258
- Publication date Apr 28, 2011
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWIT...
- Publication number 20110095257
- Publication date Apr 28, 2011
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MINIMIZE WET ETCH UNDERCUTS AND PROVIDE PORE SEALING OF E...
- Publication number 20110092077
- Publication date Apr 21, 2011
- Huiwen Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods to improve electrode diffusions in two-terminal non-volatil...
- Publication number 20100327254
- Publication date Dec 30, 2010
- SANDISK 3D LLC
- Xiying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INCREASED ARRAY FEATURE DENSITY
- Publication number 20100193916
- Publication date Aug 5, 2010
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION OF RESISTIVITY IN CARBON-BASED READ-WRITEABLE MATERIALS
- Publication number 20100163824
- Publication date Jul 1, 2010
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-B...
- Publication number 20100108982
- Publication date May 6, 2010
- SanDisk 3D LLC
- Er-Xuan Ping
- B82 - NANO-TECHNOLOGY
Information Patent Application
CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND ME...
- Publication number 20100102291
- Publication date Apr 29, 2010
- SanDisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATION METHODS FOR CARBON FILMS IN TWO- AND THREE-DIMENSIONAL...
- Publication number 20100038620
- Publication date Feb 18, 2010
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAY...
- Publication number 20100038623
- Publication date Feb 18, 2010
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...
- Publication number 20100032643
- Publication date Feb 11, 2010
- SanDisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...
- Publication number 20100032638
- Publication date Feb 11, 2010
- SanDisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...
- Publication number 20100032639
- Publication date Feb 11, 2010
- SanDisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...
- Publication number 20100032640
- Publication date Feb 11, 2010
- SanDisk 3D LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...
- Publication number 20100012914
- Publication date Jan 21, 2010
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FOR...
- Publication number 20100006811
- Publication date Jan 14, 2010
- SanDisk 3D LLC
- Huiwen Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...
- Publication number 20100006812
- Publication date Jan 14, 2010
- SanDisk 3D LLC
- Huiwen Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Multilevel nonvolatile memory device containing a carbon storage ma...
- Publication number 20090257265
- Publication date Oct 15, 2009
- SANDISK 3D LLC
- Xiying Chen
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIO...
- Publication number 20090257270
- Publication date Oct 15, 2009
- SanDisk 3D LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN AIR GAP IN MULTILEVEL INTERCONNECT STRUCTURE
- Publication number 20090093100
- Publication date Apr 9, 2009
- Li-Qun Xia
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESIS...
- Publication number 20090093132
- Publication date Apr 9, 2009
- APPLIED MATERIALS, INC.
- HUIWEN XU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Non-volatile memory cell containing an in-cell resistor

Methods for increased array feature density

Methods and apparatus for increasing memory density using diode lay...

Electrode diffusions in two-terminal non-volatile memory devices

Carbon-based interface layer for a memory device and methods of for...

Memory cell that includes a carbon-based memory element and methods...

Memory cell that includes a carbon-based reversible resistance swit...

Memory cell that includes a carbon-based reversible resistance swit...

Modulation of resistivity in carbon-based read-writeable materials

Memory cell with carbon switching material having a reduced cross-s...

Damascene integration methods for graphitic films in three-dimensio...

Memory cell that includes a carbon-based memory element and methods...

Method to minimize wet etch undercuts and provide pore sealing of e...

Electronic devices including carbon nano-tube films having carbon-b...

Methods for increased array feature density

Methods and apparatus for increasing memory density using diode lay...

Memory cell with silicon-containing carbon switching layer and meth...

Methods for increased array feature density

Integration methods for carbon films in two- and three-dimensional...

Methods to obtain low k dielectric barrier with superior etch resis...

Method of making a two-terminal non-volatile memory pillar device w...

Method to mitigate impact of UV and E-beam exposure on semiconducto...

Multilevel nonvolatile memory device containing a carbon storage ma...

In-situ oxide capping after CVD low k deposition

Patents Applicationslast 30 patents

METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHI...

METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAY...

METHODS FOR INCREASED ARRAY FEATURE DENSITY

Non-Volatile Memory Cell Containing an In-Cell Resistor

METHODS FOR INCREASED ARRAY FEATURE DENSITY

MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIA...

MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-S...

Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices

MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METH...

MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWIT...

MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWIT...

METHOD TO MINIMIZE WET ETCH UNDERCUTS AND PROVIDE PORE SEALING OF E...

Methods to improve electrode diffusions in two-terminal non-volatil...

METHODS FOR INCREASED ARRAY FEATURE DENSITY

MODULATION OF RESISTIVITY IN CARBON-BASED READ-WRITEABLE MATERIALS

ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-B...

CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND ME...

INTEGRATION METHODS FOR CARBON FILMS IN TWO- AND THREE-DIMENSIONAL...

METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAY...

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...

CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FOR...

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...

Multilevel nonvolatile memory device containing a carbon storage ma...

DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIO...

METHOD FOR FORMING AN AIR GAP IN MULTILEVEL INTERCONNECT STRUCTURE

METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESIS...