Hun-Hyeoung Leam

Person

Yongin-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 9,847,422
- Issue date Dec 19, 2017
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 9,595,612
- Issue date Mar 14, 2017
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 9,263,588
- Issue date Feb 16, 2016
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 9,184,232
- Issue date Nov 10, 2015
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,969,939
- Issue date Mar 3, 2015
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,519,465
- Issue date Aug 27, 2013
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an insulation structure and method of manufacturi...
- Patent number 8,481,387
- Issue date Jul 9, 2013
- Samsung Electronics Co., Ltd.
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,247,859
- Issue date Aug 21, 2012
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an insulation structure and method of manufacturi...
- Patent number 8,008,214
- Issue date Aug 30, 2011
- Samsung Electronics Co., Ltd.
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,928,495
- Issue date Apr 19, 2011
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming void-free layers in openings of semiconductor su...
- Patent number 7,902,059
- Issue date Mar 8, 2011
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,833,875
- Issue date Nov 16, 2010
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate structure for a semiconductor device and m...
- Patent number 7,736,963
- Issue date Jun 15, 2010
- Samsung Electronics Co., Ltd.
- Woong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming void-free layers in openings of semiconductor su...
- Patent number 7,629,217
- Issue date Dec 8, 2009
- Samsung Electronics Co., Ltd.
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory device and method of manufacturing the same
- Patent number 7,524,747
- Issue date Apr 28, 2009
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an oxinitride layer
- Patent number 7,521,375
- Issue date Apr 21, 2009
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming self-aligned floating gates using multi-etching
- Patent number 7,459,364
- Issue date Dec 2, 2008
- Samsung Electronics Co., Ltd.
- Sang-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 7,410,869
- Issue date Aug 12, 2008
- Samsung Electronics Co., Ltd.
- Hun-Hyeoung Leam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an oxide layer including increasing the temperatu...
- Patent number 7,297,620
- Issue date Nov 20, 2007
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating flash memory devices with floating gates tha...
- Patent number 7,223,657
- Issue date May 29, 2007
- Samsung Electronics Co., Ltd.
- Won-Jun Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon oxynitride layer in semiconductor device...
- Patent number 7,189,661
- Issue date Mar 13, 2007
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate structure of a non-volatile memory device...
- Patent number 7,160,776
- Issue date Jan 9, 2007
- Samsung Electronics Co. Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench isolation and method for manufacturing a non-volat...
- Patent number 7,101,803
- Issue date Sep 5, 2006
- Samsung Electronics, Co., Ltd.
- Sang-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory device and method of manufacturing the same
- Patent number 7,041,558
- Issue date May 9, 2006
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20170033225
- Publication date Feb 2, 2017
- Samsung Electronics Co., Ltd.
- JUNG-HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20160155838
- Publication date Jun 2, 2016
- Samsung Electronics Co., Ltd.
- JUNG-HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20150179799
- Publication date Jun 25, 2015
- Samsung Electronics Co., Ltd.
- JUNG-HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20150137320
- Publication date May 21, 2015
- Samsung Electronics Co., Ltd.
- JUNG-HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20130320461
- Publication date Dec 5, 2013
- Samsung Electronics Co., Ltd.
- JUNG-HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20120286369
- Publication date Nov 15, 2012
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURI...
- Publication number 20110275190
- Publication date Nov 10, 2011
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Fabricating the Same
- Publication number 20110175149
- Publication date Jul 21, 2011
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Fabricating the Same
- Publication number 20110037141
- Publication date Feb 17, 2011
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Void-Free Layers in Openings of Semiconductor Su...
- Publication number 20100048015
- Publication date Feb 25, 2010
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an oxinitride layer
- Publication number 20080090424
- Publication date Apr 17, 2008
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Fabricating the Same
- Publication number 20080057670
- Publication date Mar 6, 2008
- Jung Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an insulation structure and method of manufacturi...
- Publication number 20070167030
- Publication date Jul 19, 2007
- Jung-Geun Jee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20070026651
- Publication date Feb 1, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Hun-Hyeoung Leam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a layer and method of manufacturing a semiconduct...
- Publication number 20070022941
- Publication date Feb 1, 2007
- Jae-Young Park
- C30 - CRYSTAL GROWTH
Information Patent Application
Floating gate memory device and method of manufacturing the same
- Publication number 20060151811
- Publication date Jul 13, 2006
- Samsung Electronics Co., Ltd.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a gate insulating layer of a semiconductor device...
- Publication number 20060134925
- Publication date Jun 22, 2006
- Jai-Dong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating flash memory devices with floating gates tha...
- Publication number 20060073653
- Publication date Apr 6, 2006
- Won-Jun Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming self-aligned floating gates using multi-etching
- Publication number 20060068547
- Publication date Mar 30, 2006
- Sang-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming silicon oxynitride layer in semiconductor device...
- Publication number 20060063391
- Publication date Mar 23, 2006
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a gate structure for a semiconductor device and m...
- Publication number 20060003509
- Publication date Jan 5, 2006
- Woong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming void-free layers in openings of semiconductor su...
- Publication number 20050277248
- Publication date Dec 15, 2005
- Jung-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a gate structure of a non-volatile memory device...
- Publication number 20050277252
- Publication date Dec 15, 2005
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a dielectric layer and method of manufacturing a...
- Publication number 20050266640
- Publication date Dec 1, 2005
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a dielectric layer for a non-volatile memory cell...
- Publication number 20050153513
- Publication date Jul 14, 2005
- Woong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming capacitor using etching stopper film in semicond...
- Publication number 20050153518
- Publication date Jul 14, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating a semiconductor device and forming a trench...
- Publication number 20050101143
- Publication date May 12, 2005
- Seung-Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Floating gate memory device and method of manufacturing the same
- Publication number 20040229432
- Publication date Nov 18, 2004
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an oxide layer and method of forming an oxinitrid...
- Publication number 20040224531
- Publication date Nov 11, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Young-Sub You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of trench isolation and method for manufacturing a non-volat...
- Publication number 20040182815
- Publication date Sep 23, 2004
- Samsung Electronic Co. Ltd.
- Sang-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Hun-Hyeoung Leam

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Method of forming an insulation structure and method of manufacturi...

Semiconductor device and method of fabricating the same

Method of forming an insulation structure and method of manufacturi...

Semiconductor device and method of fabricating the same

Methods of forming void-free layers in openings of semiconductor su...

Semiconductor device and method of fabricating the same

Method of forming a gate structure for a semiconductor device and m...

Methods of forming void-free layers in openings of semiconductor su...

Floating gate memory device and method of manufacturing the same

Method of forming an oxinitride layer

Methods of forming self-aligned floating gates using multi-etching

Method of manufacturing a semiconductor device

Method of forming an oxide layer including increasing the temperatu...

Methods of fabricating flash memory devices with floating gates tha...

Method of forming silicon oxynitride layer in semiconductor device...

Methods of forming a gate structure of a non-volatile memory device...

Method of trench isolation and method for manufacturing a non-volat...

Floating gate memory device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURI...

Semiconductor Device and Method of Fabricating the Same

Semiconductor Device and Method of Fabricating the Same

Methods of Forming Void-Free Layers in Openings of Semiconductor Su...

Method of forming an oxinitride layer

Semiconductor Device and Method of Fabricating the Same

Method of forming an insulation structure and method of manufacturi...

Method of manufacturing a semiconductor device

Method of forming a layer and method of manufacturing a semiconduct...

Floating gate memory device and method of manufacturing the same

Method of forming a gate insulating layer of a semiconductor device...

Methods of fabricating flash memory devices with floating gates tha...

Methods of forming self-aligned floating gates using multi-etching

Method of forming silicon oxynitride layer in semiconductor device...

Method of forming a gate structure for a semiconductor device and m...

Methods of forming void-free layers in openings of semiconductor su...

Methods of forming a gate structure of a non-volatile memory device...

Method of forming a dielectric layer and method of manufacturing a...

Method of forming a dielectric layer for a non-volatile memory cell...

Method for forming capacitor using etching stopper film in semicond...

Methods of fabricating a semiconductor device and forming a trench...

Floating gate memory device and method of manufacturing the same

Method of forming an oxide layer and method of forming an oxinitrid...

Method of trench isolation and method for manufacturing a non-volat...