Hungtse Lin

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Nan-Tou, TW

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial plasma enhanced chemical vapor deposition (PECVD) method...
- Patent number 6,818,533
- Issue date Nov 16, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Hsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon substrate wafer fabrication method employing halogen getter...
- Patent number 6,730,580
- Issue date May 4, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Hsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified pad for copper/low-k
- Patent number 6,560,862
- Issue date May 13, 2003
- Taiwan Semiconductor Manufacturing Company
- Sheng-Hsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase deposition of a silicon oxide layer for use as a liner...
- Patent number 6,518,166
- Issue date Feb 11, 2003
- Taiwan Semiconductor Manufacturing Company
- Sheng Hsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Epitaxial plasma enhanced chemical vapor deposition (PECVD) method...
- Publication number 20030211712
- Publication date Nov 13, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Hsiung Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
MODIFIED PAD FOR COPPER/LOW-K
- Publication number 20030074789
- Publication date Apr 24, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Sheng-Hsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon substrate wafer fabrication method employing halogen getter...
- Publication number 20030008479
- Publication date Jan 9, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Hsiung Chen
- C30 - CRYSTAL GROWTH