Hwichan JUN

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Crossing multi-stack nanosheet structure and method of manufacturin...
- Patent number 12,087,815
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device having mirror-symmetric pattern
- Patent number 12,057,448
- Issue date Aug 6, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM memory cell for stacked transistors with different channel width
- Patent number 11,968,818
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,935,922
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an array of multi-stack nanosheet structures havi...
- Patent number 11,742,345
- Issue date Aug 29, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device having mirror-symmetric pattern
- Patent number 11,735,585
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crossing multi-stack nanosheet structure and method of manufacturin...
- Patent number 11,670,677
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including self-aligned gate structure and meth...
- Patent number 11,569,232
- Issue date Jan 31, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory of 3D stacked devices
- Patent number 11,538,814
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,502,167
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of multi-stack nanosheet structures
- Patent number 11,437,369
- Issue date Sep 6, 2022
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN
- Publication number 20230369317
- Publication date Nov 16, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...
- Publication number 20230231015
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Hwichan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF MULTI-STACK NANOSHEET STRUCTURES
- Publication number 20220359500
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM MEMORY CELL FOR STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTH
- Publication number 20220302134
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY OF 3D STACKED DEVICES
- Publication number 20220246623
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN
- Publication number 20220231013
- Publication date Jul 21, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED GATE STRUCTURE AND METH...
- Publication number 20220157815
- Publication date May 19, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...
- Publication number 20220109047
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Hwichan JUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF MULTI-STACK NANOSHEET STRUCTURES AND METHOD OF MANUFACTURI...
- Publication number 20220108981
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Inchan HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE
- Publication number 20220109046
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS

Hwichan JUN

Person

Patents Grantslast 30 patents

Crossing multi-stack nanosheet structure and method of manufacturin...

Stacked semiconductor device having mirror-symmetric pattern

SRAM memory cell for stacked transistors with different channel width

Semiconductor device having stepped multi-stack transistor structure

Method of forming an array of multi-stack nanosheet structures havi...

Stacked semiconductor device having mirror-symmetric pattern

Crossing multi-stack nanosheet structure and method of manufacturin...

Semiconductor device including self-aligned gate structure and meth...

Static random access memory of 3D stacked devices

Semiconductor device having stepped multi-stack transistor structure

Array of multi-stack nanosheet structures

Patents Applicationslast 30 patents

STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN

CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...

ARRAY OF MULTI-STACK NANOSHEET STRUCTURES

SRAM MEMORY CELL FOR STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTH

STATIC RANDOM ACCESS MEMORY OF 3D STACKED DEVICES

STACKED SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC PATTERN

SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED GATE STRUCTURE AND METH...

CROSSING MULTI-STACK NANOSHEET STRUCTURE AND METHOD OF MANUFACTURIN...

ARRAY OF MULTI-STACK NANOSHEET STRUCTURES AND METHOD OF MANUFACTURI...

SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE