Hyeonjin Shin

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 12,255,244
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pre-treating substrate and method of directly forming gra...
- Patent number 12,217,958
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming nanocrystalline graphene
- Patent number 12,211,744
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Black phosphorus-two dimensional material complex and method of man...
- Patent number 12,211,904
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensors integrated with infrared sensors and electronic devic...
- Patent number 12,199,129
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional material
- Patent number 12,191,392
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Van Luan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal-to-semiconductor contact including a 2D crystal material layer
- Patent number 12,183,780
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and electronic apparatus including the same
- Patent number 12,183,679
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural computer including image sensor capable of controlling photo...
- Patent number 12,147,888
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Changhyun Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 12,139,814
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Two-dimensional material-based wiring conductive layer contact stru...
- Patent number 12,142,697
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche photodetectors and image sensors including the same
- Patent number 12,132,133
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Sanghyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene structure and method of forming the graphene structure
- Patent number 12,131,905
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices having buried gates
- Patent number 12,127,394
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Huijung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Functionalized polycyclic aromatic hydrocarbon compound and light-e...
- Patent number 12,122,732
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Sangwon Kim
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Method of forming graphene
- Patent number 12,103,850
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Van Luan Nguyen
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Transistor including two-dimensional (2D) channel
- Patent number 12,087,818
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and apparatus including the same
- Patent number 12,080,649
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure
- Patent number 12,080,595
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 12,062,697
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous boron nitride film and anti-reflection coating structure...
- Patent number 12,061,312
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Taejin Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including surface-treated semiconductor layer
- Patent number 12,046,656
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including metal-2 dimensional material-semicon...
- Patent number 12,040,360
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 12,034,049
- Issue date Jul 9, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including channel formed of 2D material
- Patent number 12,027,588
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Interconnect structure including graphene-metal barrier and method...
- Patent number 12,014,991
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 12,002,882
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristor and neuromorphic device comprising the same
- Patent number 11,985,910
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250089320
- Publication date Mar 13, 2025
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20250066950
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING INTERCONNECT STRUCTURE
- Publication number 20240395613
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20240363689
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT...
- Publication number 20240242965
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Taejin CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240186183
- Publication date Jun 6, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
- Publication number 20240178144
- Publication date May 30, 2024
- SAMSUNG ELECTRONICS CO., LTD.
- Keunwook SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
- Publication number 20240162337
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Van Luan NGUYEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...
- Publication number 20240151522
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- G01 - MEASURING TESTING
Information Patent Application
AMORPHOUS BORON NITRIDE COMPOUND, BORON NITRIDE FILM INCLUDING THE...
- Publication number 20240034636
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Stephan ROCHE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...
- Publication number 20240038903
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...
- Publication number 20230395665
- Publication date Dec 7, 2023
- Samsung Electronics Co., LTD
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME...
- Publication number 20230349072
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Taejin CHOI
- C30 - CRYSTAL GROWTH
Information Patent Application
AVALANCHE PHOTODETECTORS AND IMAGE SENSORS INCLUDING THE SAME
- Publication number 20230335665
- Publication date Oct 19, 2023
- Samsung Electronics Co., Ltd.
- Sanghyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CHALCOGENIDE FILM AND METHOD AND DEVICE FOR MANUFACTURING THE...
- Publication number 20230313365
- Publication date Oct 5, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Eun BYUN
- B22 - CASTING POWDER METALLURGY
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20230272554
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...
- Publication number 20230253320
- Publication date Aug 10, 2023
- Samsung Electronics Co., Ltd.
- Hyeonjin SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING BURIED GATES
- Publication number 20230247824
- Publication date Aug 3, 2023
- Samsung Electronics Co., Ltd.
- Huijung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE
- Publication number 20230207312
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...
- Publication number 20230197811
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20230189673
- Publication date Jun 15, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
Information Patent Application
VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...
- Publication number 20230155017
- Publication date May 18, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
- Publication number 20230114347
- Publication date Apr 13, 2023
- Samsung Electronics Co., Ltd.
- Changhyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230104991
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL
- Publication number 20230077783
- Publication date Mar 16, 2023
- Samsung Electronics Co.,Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230079680
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20230076900
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF...
- Publication number 20230061267
- Publication date Mar 2, 2023
- Samsung Electronics Co., Ltd.
- Junyoung KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
- Publication number 20230041352
- Publication date Feb 9, 2023
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL
- Publication number 20230031861
- Publication date Feb 2, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS

Hyeonjin Shin

Person

Patents Grantslast 30 patents

Field effect transistor including gate insulating layer formed of t...

Method of pre-treating substrate and method of directly forming gra...

Method of forming nanocrystalline graphene

Black phosphorus-two dimensional material complex and method of man...

Image sensors integrated with infrared sensors and electronic devic...

Semiconductor device including two-dimensional material

Method of fabricating hexagonal boron nitride

Metal-to-semiconductor contact including a 2D crystal material layer

Interconnect structure and electronic apparatus including the same

Neural computer including image sensor capable of controlling photo...

Boron nitride layer, apparatus including the same, and method of fa...

Two-dimensional material-based wiring conductive layer contact stru...

Avalanche photodetectors and image sensors including the same

Graphene structure and method of forming the graphene structure

Semiconductor devices having buried gates

Functionalized polycyclic aromatic hydrocarbon compound and light-e...

Method of forming graphene

Transistor including two-dimensional (2D) channel

Semiconductor memory device and apparatus including the same

Method of forming interconnect structure

Semiconductor device including two-dimensional semiconductor material

Amorphous boron nitride film and anti-reflection coating structure...

Semiconductor device including surface-treated semiconductor layer

Semiconductor device including metal-2 dimensional material-semicon...

Superlattice structure including two-dimensional material and devic...

Field effect transistor including channel formed of 2D material

Semiconductor device including graphene and method of manufacturing...

Interconnect structure including graphene-metal barrier and method...

Vertical type transistor, inverter including the same, and vertical...

Memristor and neuromorphic device comprising the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

METHOD OF FORMING INTERCONNECT STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT...

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...

AMORPHOUS BORON NITRIDE COMPOUND, BORON NITRIDE FILM INCLUDING THE...

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...

SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...

NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME...

AVALANCHE PHOTODETECTORS AND IMAGE SENSORS INCLUDING THE SAME

METAL CHALCOGENIDE FILM AND METHOD AND DEVICE FOR MANUFACTURING THE...

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...

SEMICONDUCTOR DEVICES HAVING BURIED GATES

GRAPHENE STRUCTURE AND METHOD OF FORMING GRAPHENE STRUCTURE

FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...

NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...

METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL

WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

ELECTRONIC DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF...

INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME

TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL