Hyeoungwon Seo

Person

Yongin-City, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical variable resistance memory devices
- Patent number 12,193,343
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having charge storage pattern
- Patent number 11,943,925
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices
- Patent number 11,887,648
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,887,986
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Sungwon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices
- Patent number 11,729,974
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Kyunghwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including a gate insulation pattern and a gate...
- Patent number 10,811,408
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Hyeoungwon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and operation method thereof
- Patent number 10,726,906
- Issue date Jul 28, 2020
- Samsung Electronics Co., Ltd.
- Hyeoungwon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including device isolation structures and met...
- Patent number 9,865,453
- Issue date Jan 9, 2018
- Samsung Electronics Co., Ltd.
- Daehyun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices
- Patent number 9,825,142
- Issue date Nov 21, 2017
- Samsung Electronics Co., Ltd.
- HyeoungWon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode structure
- Patent number 8,008,155
- Issue date Aug 30, 2011
- Samsung Electronics Co., Ltd.
- Jaeman Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors including source/drain regions extending b...
- Patent number 7,531,874
- Issue date May 12, 2009
- Samsung Electronics Co., Ltd.
- Youngwoong Son
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20240119984
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- JAEHO HONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220352170
- Publication date Nov 3, 2022
- Samsung Electronics Co., Ltd.
- Kyunghwan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220216239
- Publication date Jul 7, 2022
- Samsung Electronics Co., Ltd.
- Sungwon YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220130856
- Publication date Apr 28, 2022
- Samsung Electronics Co., Ltd.
- HYUNCHEOL KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20220045094
- Publication date Feb 10, 2022
- Samsung Electronics Co., Ltd.
- Kyunghwan LEE
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL VARIABLE RESISTANCE MEMORY DEVICES
- Publication number 20220029095
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Hyuncheol KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20200152256
- Publication date May 14, 2020
- Samsung Electronics Co., Ltd.
- HYEOUNGWON SEO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A GATE INSULATION PATTERN AND A GATE...
- Publication number 20190067278
- Publication date Feb 28, 2019
- Samsung Electronics Co., Ltd.
- Hyeoungwon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING DEVICE ISOLATION STRUCTURES AND MET...
- Publication number 20170018552
- Publication date Jan 19, 2017
- Samsung Electronics Co., Ltd.
- Daehyun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Semiconductor Devices
- Publication number 20160181258
- Publication date Jun 23, 2016
- Samsung Electronics Co., Ltd.
- HyeoungWon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode structure
- Publication number 20080017913
- Publication date Jan 24, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Jaeman Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS EXTENDING B...
- Publication number 20070290258
- Publication date Dec 20, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Youngwoong Son
- H01 - BASIC ELECTRIC ELEMENTS

Hyeoungwon Seo

Person

Patents Grantslast 30 patents

Vertical variable resistance memory devices

Semiconductor memory device having charge storage pattern

Semiconductor memory devices

Semiconductor memory device

Semiconductor memory devices

Semiconductor device including a gate insulation pattern and a gate...

Memory device and operation method thereof

Semiconductor devices including device isolation structures and met...

Methods of fabricating semiconductor devices

Gate electrode structure

Field effect transistors including source/drain regions extending b...

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICES

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICES

VERTICAL VARIABLE RESISTANCE MEMORY DEVICES

MEMORY DEVICE AND OPERATION METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING A GATE INSULATION PATTERN AND A GATE...

SEMICONDUCTOR DEVICES INCLUDING DEVICE ISOLATION STRUCTURES AND MET...

Methods of Fabricating Semiconductor Devices

Gate electrode structure

FIELD EFFECT TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS EXTENDING B...