Hyuck Soo Yang

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Watervliet, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Apparatuses including Finfets having different gate oxide configura...
- Patent number 12,199,094
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC product comprising an insulating gate separation structure posit...
- Patent number 11,522,068
- Issue date Dec 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,453,936
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFETS HAVING VARIOUS DIFFERENT THICKNESSES OF GATE OXIDES AND REL...
- Publication number 20230141716
- Publication date May 11, 2023
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...
- Publication number 20190355832
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131429
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS