Hyucksoo Yang

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET spacer etch for eSiGe improvement
- Patent number 9,356,147
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for preventing oxidation damage during FinFET fabrication
- Patent number 9,324,841
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing EPI damage for cap nitride strip scheme in a Fin-shaped...
- Patent number 9,236,312
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistor structures with extended embedded stress elemen...
- Patent number 9,024,368
- Issue date May 5, 2015
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AUTOMATIC CONTROL OF SPRAY BAR AND UNITS FOR CHEMICAL MECHANICAL PO...
- Publication number 20170053794
- Publication date Feb 23, 2017
- GLOBALFOUNDRIES INC.
- Hong Jin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION
- Publication number 20160211373
- Publication date Jul 21, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...
- Publication number 20160086952
- Publication date Mar 24, 2016
- GLOBALFOUNDRIES INC.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...
- Publication number 20150129983
- Publication date May 14, 2015
- GLOBALFOUNDRIES Inc.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...
- Publication number 20150102414
- Publication date Apr 16, 2015
- GLOBAL FOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION
- Publication number 20150099340
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINS WITH RECESS SHAPES
- Publication number 20150017774
- Publication date Jan 15, 2015
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER ETCH FOR eSiGe IMPROVEMENT
- Publication number 20140367751
- Publication date Dec 18, 2014
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS

Hyucksoo Yang

Person

Patents Grantslast 30 patents

FinFET spacer etch for eSiGe improvement

Methods for preventing oxidation damage during FinFET fabrication

Preventing EPI damage for cap nitride strip scheme in a Fin-shaped...

Fin-type transistor structures with extended embedded stress elemen...

Patents Applicationslast 30 patents

AUTOMATIC CONTROL OF SPRAY BAR AND UNITS FOR CHEMICAL MECHANICAL PO...

METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION

PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...

FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...

PREVENTING EPI DAMAGE FOR CAP NITRIDE STRIP SCHEME IN A FIN-SHAPED...

METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION

METHOD OF FORMING FINS WITH RECESS SHAPES

FINFET SPACER ETCH FOR eSiGe IMPROVEMENT