Hyun Koo Lee

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned ion beam etch sputter mask for magnetoresistive random...
- Patent number 10,763,429
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Steve Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper to aluminum interlayer interconnect using stud and via liner
- Patent number 7,087,997
- Issue date Aug 8, 2006
- International Business Machines Corporation
- Lloyd G. Burrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper to aluminum interlayer interconnect using stud and via liner
- Patent number 7,037,824
- Issue date May 2, 2006
- International Business Machines Corporation
- Lloyd G. Burrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene interconnect structure using low stress fluorosilica...
- Patent number 7,034,400
- Issue date Apr 25, 2006
- International Business Machines Corporation
- Edward P. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to create EEPROM memory structures integrated with high perf...
- Patent number 6,504,207
- Issue date Jan 7, 2003
- International Business Machines Corporation
- Bomy A. Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Copper vias in low-k technology
- Patent number 6,383,929
- Issue date May 7, 2002
- International Business Machines Corporation
- Steven H. Boettcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine-free barrier layer between conductor and insulator for deg...
- Patent number 6,310,300
- Issue date Oct 30, 2001
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine barrier layer between conductor and insulator for degradat...
- Patent number 6,214,730
- Issue date Apr 10, 2001
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing fluorine barrier layer between conductor and i...
- Patent number 6,066,577
- Issue date May 23, 2000
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine barrier layer between conductor and insulator for degradat...
- Patent number 5,930,655
- Issue date Jul 27, 1999
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of aluminum metallization against chemical attack during...
- Patent number 5,731,246
- Issue date Mar 24, 1998
- International Business Machines Corporation
- Paul Evans Bakeman
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Protection of aluminum metallization against chemical attack during...
- Patent number 5,480,748
- Issue date Jan 2, 1996
- International Business Machines Corporation
- Paul E. Bakeman
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED ION BEAM ETCH SPUTTER MASK FOR MAGNETORESISTIVE RANDOM...
- Publication number 20200119261
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Steve Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper to aluminum interlayer interconnect using stud and via liner
- Publication number 20040207092
- Publication date Oct 21, 2004
- Lloyd G. Burrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene interconnect structure using low stress fluorosilica...
- Publication number 20040061235
- Publication date Apr 1, 2004
- Edward P. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper to aluminum interlayer interconnect using stud and via liner
- Publication number 20020127846
- Publication date Sep 12, 2002
- Lloyd G. Burrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL DAMASCENE INTERCONNECT STRUCTURE USING LOW STRESS FLOUROSILICA...
- Publication number 20020076917
- Publication date Jun 20, 2002
- EDWARD P BARTH
- H01 - BASIC ELECTRIC ELEMENTS

Hyun Koo Lee

Person

Patents Grantslast 30 patents

Self-aligned ion beam etch sputter mask for magnetoresistive random...

Copper to aluminum interlayer interconnect using stud and via liner

Copper to aluminum interlayer interconnect using stud and via liner

Dual damascene interconnect structure using low stress fluorosilica...

Method to create EEPROM memory structures integrated with high perf...

Copper vias in low-k technology

Fluorine-free barrier layer between conductor and insulator for deg...

Fluorine barrier layer between conductor and insulator for degradat...

Method for providing fluorine barrier layer between conductor and i...

Fluorine barrier layer between conductor and insulator for degradat...

Protection of aluminum metallization against chemical attack during...

Protection of aluminum metallization against chemical attack during...

Patents Applicationslast 30 patents

SELF-ALIGNED ION BEAM ETCH SPUTTER MASK FOR MAGNETORESISTIVE RANDOM...

Copper to aluminum interlayer interconnect using stud and via liner

Dual damascene interconnect structure using low stress fluorosilica...

Copper to aluminum interlayer interconnect using stud and via liner

DUAL DAMASCENE INTERCONNECT STRUCTURE USING LOW STRESS FLOUROSILICA...