Hyungjun Kim

Person

Lagrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Atomic layer deposition metallic contacts, gates and diffusion barr...
- Patent number 7,998,842
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature processing compatible metal gate electrode for pFE...
- Patent number 7,863,083
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect structure diffusion barrier with...
- Patent number 7,378,338
- Issue date May 27, 2008
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature stable metal nitride gate electrode
- Patent number 7,282,403
- Issue date Oct 16, 2007
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PE-ALD of TaN diffusion barrier region on low-k materials
- Patent number 7,211,507
- Issue date May 1, 2007
- International Business Machines Corporation
- Derren N. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma enhanced ALD of tantalum nitride and bilayer
- Patent number 7,186,446
- Issue date Mar 6, 2007
- International Business Machines Corporation
- Hyungjun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interconnect structure diffusion barrier with high nitrogen content
- Patent number 7,098,537
- Issue date Aug 29, 2006
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature stable metal nitride gate electrode
- Patent number 7,023,064
- Issue date Apr 4, 2006
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metallic contacts, gates and diffusion b...
- Patent number 6,943,097
- Issue date Sep 13, 2005
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of passivating a metal-gated complementary metal oxide semi...
- Patent number 6,770,500
- Issue date Aug 3, 2004
- International Business Machines Corporation
- Alessandro Cesare Callegari
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Atomic laminates for diffucion barrier applications
- Publication number 20090302474
- Publication date Dec 10, 2009
- International Business Machines Corporation
- Katayun Barmak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Temperature Processing Compatible Metal Gate Electrode For pFE...
- Publication number 20080311745
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Interconnect Structures
- Publication number 20080166870
- Publication date Jul 10, 2008
- International Business Machines Corporation
- Elbert Emin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Diffusion Barrier With High Nitrogen Content
- Publication number 20060264048
- Publication date Nov 23, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature stable metal nitride gate electrode
- Publication number 20060040439
- Publication date Feb 23, 2006
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposition metallic contacts, gates and diffusion barr...
- Publication number 20060003557
- Publication date Jan 5, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE STABLE METAL NITRIDE GATE ELECTRODE
- Publication number 20050280099
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS
- Publication number 20050269703
- Publication date Dec 8, 2005
- International Business Machines Corporation
- Derren N. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Diffusion Barrier with High Nitrogen Content
- Publication number 20050110144
- Publication date May 26, 2005
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma enhanced ALD of tantalum nitride and bilayer
- Publication number 20050095443
- Publication date May 5, 2005
- Hyungjun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic laminates for diffusion barrier applications
- Publication number 20050070097
- Publication date Mar 31, 2005
- International Business Machines Corporation
- Katayun Barmak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposition of metallic contacts, gates and diffusion b...
- Publication number 20050042865
- Publication date Feb 24, 2005
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of passivating a metal-gated complementary metal oxide semi...
- Publication number 20030186518
- Publication date Oct 2, 2003
- International Business Machines Corporation
- Alessandro Cesare Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High temperature processing compatible metal gate electrode for pFE...
- Publication number 20030098489
- Publication date May 29, 2003
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS

Hyungjun Kim

Person

Patents Grantslast 30 patents

Atomic layer deposition metallic contacts, gates and diffusion barr...

High temperature processing compatible metal gate electrode for pFE...

Method of forming an interconnect structure diffusion barrier with...

Temperature stable metal nitride gate electrode

PE-ALD of TaN diffusion barrier region on low-k materials

Plasma enhanced ALD of tantalum nitride and bilayer

Interconnect structure diffusion barrier with high nitrogen content

Temperature stable metal nitride gate electrode

Atomic layer deposition of metallic contacts, gates and diffusion b...

Process of passivating a metal-gated complementary metal oxide semi...

Patents Applicationslast 30 patents

Atomic laminates for diffucion barrier applications

High Temperature Processing Compatible Metal Gate Electrode For pFE...

Fabrication of Interconnect Structures

Interconnect Structure Diffusion Barrier With High Nitrogen Content

Temperature stable metal nitride gate electrode

Atomic layer deposition metallic contacts, gates and diffusion barr...

TEMPERATURE STABLE METAL NITRIDE GATE ELECTRODE

PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS

Interconnect Structure Diffusion Barrier with High Nitrogen Content

Plasma enhanced ALD of tantalum nitride and bilayer

Atomic laminates for diffusion barrier applications

Atomic layer deposition of metallic contacts, gates and diffusion b...

Process of passivating a metal-gated complementary metal oxide semi...

High temperature processing compatible metal gate electrode for pFE...