Hyunwoo PARK

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated device comprising a CMOS structure comprising well-less...
- Patent number 11,502,079
- Issue date Nov 15, 2022
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction in polysilicon-on-active-edge structures
- Patent number 11,444,201
- Issue date Sep 13, 2022
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor for gate leakage detection
- Patent number 10,996,261
- Issue date May 4, 2021
- QUALCOMM Incorporated
- Hyunwoo Park
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE CONTACT ON SOURCE AND DRAIN
- Publication number 20240321965
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...
- Publication number 20240321861
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS
- Publication number 20240321860
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...
- Publication number 20240297218
- Publication date Sep 5, 2024
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SMALL CONTACT STRUCTURE
- Publication number 20240266217
- Publication date Aug 8, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-TO-CONTACT SHORT PREVENTION WITH AN INNER SPACER
- Publication number 20220216328
- Publication date Jul 7, 2022
- QUALCOMM Incorporated
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN POLYSILICON-ON-ACTIVE-EDGE STRUCTURES
- Publication number 20210305429
- Publication date Sep 30, 2021
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR (FET) (FINFET) CIRCUITS EMPLOYING REPLA...
- Publication number 20210143153
- Publication date May 13, 2021
- QUALCOMM Incorporated
- Kwanyong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE COMPRISING A CMOS STRUCTURE COMPRISING WELL-LESS...
- Publication number 20210057410
- Publication date Feb 25, 2021
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSOR FOR GATE LEAKAGE DETECTION
- Publication number 20200049757
- Publication date Feb 13, 2020
- QUALCOMM Incorporated
- Hyunwoo PARK
- G01 - MEASURING TESTING

Hyunwoo PARK

Person

Patents Grantslast 30 patents

Integrated device comprising a CMOS structure comprising well-less...

Leakage current reduction in polysilicon-on-active-edge structures

Sensor for gate leakage detection

Patents Applicationslast 30 patents

SELECTIVE CONTACT ON SOURCE AND DRAIN

LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...

ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS

TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...

SELF-ALIGNED SMALL CONTACT STRUCTURE

GATE-TO-CONTACT SHORT PREVENTION WITH AN INNER SPACER

LEAKAGE CURRENT REDUCTION IN POLYSILICON-ON-ACTIVE-EDGE STRUCTURES

FIN FIELD-EFFECT TRANSISTOR (FET) (FINFET) CIRCUITS EMPLOYING REPLA...

INTEGRATED DEVICE COMPRISING A CMOS STRUCTURE COMPRISING WELL-LESS...

SENSOR FOR GATE LEAKAGE DETECTION