I-HSUANG LO

Person

KAOHSIUNG, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing indium gallium nitride/gallium nitride qua...
- Patent number 10,811,559
- Issue date Oct 20, 2020
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element with an enhanced electroluminescence effect
- Patent number 10,381,508
- Issue date Aug 13, 2019
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride epitaxial structure and method for manufacturing the same
- Patent number 10,344,397
- Issue date Jul 9, 2019
- National Sun Yat-sen University
- I-kai Lo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxy structure of a light emitting element having III-nitride qu...
- Patent number 9,312,440
- Issue date Apr 12, 2016
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride quantum well structure and a light-emitting unit using...
- Patent number 9,147,808
- Issue date Sep 29, 2015
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride quantum well structure, a method for producing the same...
- Patent number 8,916,458
- Issue date Dec 23, 2014
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Homo-material heterophased quantum well
- Patent number 8,766,237
- Issue date Jul 1, 2014
- National Sun Yat-sen University
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for three-dimensional GaN epitaxial structure
- Patent number 8,728,235
- Issue date May 20, 2014
- National Sun Yat-sen University
- I-Kai Lo
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING INDIUM GALLIUM NITRIDE QUANTUM WELL STRUCTURE
- Publication number 20250072164
- Publication date Feb 27, 2025
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-KAI LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INDIUM GALLIUM NITRIDE QUANTUM WELL
- Publication number 20230187576
- Publication date Jun 15, 2023
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-KAI LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE QUA...
- Publication number 20200203555
- Publication date Jun 25, 2020
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING ELEMENT
- Publication number 20190044022
- Publication date Feb 7, 2019
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20180119307
- Publication date May 3, 2018
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-kai Lo
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication of M-plane Gallium Nitride
- Publication number 20170345650
- Publication date Nov 30, 2017
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Light Emitting Element
- Publication number 20160293793
- Publication date Oct 6, 2016
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE-MATCHED LIGHT EMITTING ELEMENT
- Publication number 20160141453
- Publication date May 19, 2016
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE OXIDATION-RESISTANT COATED STEEL PLATE AND HOT STA...
- Publication number 20160083814
- Publication date Mar 24, 2016
- CHINA STEEL CORPORATION
- SHEAU-HWA HSIEH
- C21 - METALLURGY OF IRON
Information Patent Application
STACKING STRUCTURE OF A LIGHT-EMITTING DEVICE
- Publication number 20150333226
- Publication date Nov 19, 2015
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY STRUCTURE OF A LIGHT EMITTING ELEMENT
- Publication number 20150333222
- Publication date Nov 19, 2015
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-KAI LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING STRUCTURE OF A PHOTOELECTRIC DEVICE
- Publication number 20150333209
- Publication date Nov 19, 2015
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Quantum Well Structure and a Light-Emitting Unit Using...
- Publication number 20150102286
- Publication date Apr 16, 2015
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE QUANTUM WELL STRUCTURE, A METHOD FOR PRODUCING THE SAME...
- Publication number 20140110664
- Publication date Apr 24, 2014
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOMO-MATERIAL HETEROPHASED QUANTUM WELL
- Publication number 20120043528
- Publication date Feb 23, 2012
- I-Kai Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL GAN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD...
- Publication number 20100229788
- Publication date Sep 16, 2010
- NATIONAL SUN YAT-SEN UNIVERSITY
- I-Kai LO
- C30 - CRYSTAL GROWTH

I-HSUANG LO

Person

Patents Grantslast 30 patents

Method for manufacturing indium gallium nitride/gallium nitride qua...

Light emitting element with an enhanced electroluminescence effect

III-nitride epitaxial structure and method for manufacturing the same

Epitaxy structure of a light emitting element having III-nitride qu...

III-nitride quantum well structure and a light-emitting unit using...

III-nitride quantum well structure, a method for producing the same...

Homo-material heterophased quantum well

Manufacturing method for three-dimensional GaN epitaxial structure

Patents Applicationslast 30 patents

METHOD OF FORMING INDIUM GALLIUM NITRIDE QUANTUM WELL STRUCTURE

METHOD FOR MANUFACTURING INDIUM GALLIUM NITRIDE QUANTUM WELL

METHOD FOR MANUFACTURING INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE QUA...

LIGHT EMITTING ELEMENT

III-NITRIDE EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Fabrication of M-plane Gallium Nitride

Method for Manufacturing a Light Emitting Element

LATTICE-MATCHED LIGHT EMITTING ELEMENT

HIGH TEMPERATURE OXIDATION-RESISTANT COATED STEEL PLATE AND HOT STA...

STACKING STRUCTURE OF A LIGHT-EMITTING DEVICE

EPITAXY STRUCTURE OF A LIGHT EMITTING ELEMENT

STACKING STRUCTURE OF A PHOTOELECTRIC DEVICE

III-Nitride Quantum Well Structure and a Light-Emitting Unit Using...

III-NITRIDE QUANTUM WELL STRUCTURE, A METHOD FOR PRODUCING THE SAME...

HOMO-MATERIAL HETEROPHASED QUANTUM WELL

THREE-DIMENSIONAL GAN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD...