Ian John CURTIN

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-situ PECVD cap layer
- Patent number 12,252,782
- Issue date Mar 18, 2025
- Lam Research Corporation
- Jeremy David Fields
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal atomic layer deposition of silicon-containing films
- Patent number 12,157,945
- Issue date Dec 3, 2024
- Lam Research Corporation
- Awnish Gupta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-κ ALD gap-fill methods and material
- Patent number 12,020,923
- Issue date Jun 25, 2024
- Lam Research Corporation
- Joseph R. Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
HIGH PRESSURE INERT OXIDATION AND IN-SITU ANNEALING PROCESS TO IMPR...
- Publication number 20250154644
- Publication date May 15, 2025
- LAM RESEARCH CORPORATION
- Eli Jeon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW-K ALD GAP-FILL METHODS AND MATERIAL
- Publication number 20240347337
- Publication date Oct 17, 2024
- LAM RESEARCH CORPORATION
- Joseph R. Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REDUCING INTRALEVEL CAPACITANCE IN SEMICONDUCTOR DEVICES
- Publication number 20230307290
- Publication date Sep 28, 2023
- LAM RESEARCH CORPORATION
- Joseph R. ABEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-FEATURE WET ETCH RATE RATIO REDUCTION
- Publication number 20230220544
- Publication date Jul 13, 2023
- LAM RESEARCH CORPORATION
- Awnish Gupta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEAM MITIGATION AND INTEGRATED LINER FOR GAP FILL
- Publication number 20230175117
- Publication date Jun 8, 2023
- LAM RESEARCH CORPORATION
- Dustin Zachary AUSTIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-PLASMA ENHANCED DEPOSITION FOR RECESS ETCH MATCHING
- Publication number 20230087976
- Publication date Mar 23, 2023
- LAM RESEARCH CORPORATION
- Ian John Curtin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU PECVD CAP LAYER
- Publication number 20230002887
- Publication date Jan 5, 2023
- LAM RESEARCH CORPORATION
- Jeremy David FIELDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THERMAL ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS
- Publication number 20220275510
- Publication date Sep 1, 2022
- LAM RESEARCH CORPORATION
- Awnish GUPTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IN-SITU CONTROL OF FILM PROPERTIES DURING ATOMIC LAYER DEPOSITION
- Publication number 20220238325
- Publication date Jul 28, 2022
- LAM RESEARCH CORPORATION
- Douglas Walter Agnew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K ALD GAP-FILL METHODS AND MATERIAL
- Publication number 20220037146
- Publication date Feb 3, 2022
- LAM RESEARCH CORPORATION
- Joseph R. Abel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD ANDD APPARATUS FOR ATOMIC LAYER DEPOSITION OR CHEMICAL VAPOR...
- Publication number 20210398780
- Publication date Dec 23, 2021
- LAM RESEARCH CORPORATION
- Adrien LAVOIE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Ian John CURTIN

Person

Patents Grantslast 30 patents

In-situ PECVD cap layer

Thermal atomic layer deposition of silicon-containing films

Low-κ ALD gap-fill methods and material

Patents Applicationslast 30 patents

HIGH PRESSURE INERT OXIDATION AND IN-SITU ANNEALING PROCESS TO IMPR...

LOW-K ALD GAP-FILL METHODS AND MATERIAL

REDUCING INTRALEVEL CAPACITANCE IN SEMICONDUCTOR DEVICES

IN-FEATURE WET ETCH RATE RATIO REDUCTION

SEAM MITIGATION AND INTEGRATED LINER FOR GAP FILL

NON-PLASMA ENHANCED DEPOSITION FOR RECESS ETCH MATCHING

IN-SITU PECVD CAP LAYER

THERMAL ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS

IN-SITU CONTROL OF FILM PROPERTIES DURING ATOMIC LAYER DEPOSITION

LOW-K ALD GAP-FILL METHODS AND MATERIAL

METHOD ANDD APPARATUS FOR ATOMIC LAYER DEPOSITION OR CHEMICAL VAPOR...