Ibrahim Khan Burki

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for containing a silicided gate within a sidewall spacer in...
- Patent number 8,252,676
- Issue date Aug 28, 2012
- Spansion LLC
- Kelley Kyle Higgins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for containing a silicided gate within a sidewall spacer in...
- Patent number 7,737,019
- Issue date Jun 15, 2010
- Spansion LLC
- Kelley Kyle Higgins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate semiconductor component and method of manufacture
- Patent number 6,984,563
- Issue date Jan 10, 2006
- FASL LLC
- Kelley Kyle Higgins, Sr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active region implant methodology using indium to enhance short cha...
- Patent number 6,331,458
- Issue date Dec 18, 2001
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interlayer insulator and method for fab...
- Patent number 6,232,663
- Issue date May 15, 2001
- Fujitsu Limited
- Toshio Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semicondutor having selectively enhanced field oxide areas and meth...
- Patent number 5,661,335
- Issue date Aug 26, 1997
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication using a metal silicide having a sput...
- Patent number 5,550,084
- Issue date Aug 27, 1996
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a silicide using ion beam mixing
- Patent number 5,470,794
- Issue date Nov 28, 1995
- Advanced Micro Devices
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for low energy implantation of argon to control titanium sil...
- Patent number 5,444,024
- Issue date Aug 22, 1995
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium implant for use with ultra-shallow junctions
- Patent number 5,401,674
- Issue date Mar 28, 1995
- Advanced Micro Devices
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor gate electrode with fluorine mi...
- Patent number 5,393,676
- Issue date Feb 28, 1995
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor having selectively enhanced field...
- Patent number 5,372,951
- Issue date Dec 13, 1994
- Advanced Micro Devices, Inc.
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR CONTAINING A SILICIDED GATE WITHIN A SIDEWALL SPACER IN...
- Publication number 20100219486
- Publication date Sep 2, 2010
- SPANSION LLC
- Kelley Kyle Higgins
- H01 - BASIC ELECTRIC ELEMENTS

Ibrahim Khan Burki

Person

Patents Grantslast 30 patents

Method for containing a silicided gate within a sidewall spacer in...

Method for containing a silicided gate within a sidewall spacer in...

Floating gate semiconductor component and method of manufacture

Active region implant methodology using indium to enhance short cha...

Semiconductor device having interlayer insulator and method for fab...

Semicondutor having selectively enhanced field oxide areas and meth...

Integrated circuit fabrication using a metal silicide having a sput...

Method for forming a silicide using ion beam mixing

Method for low energy implantation of argon to control titanium sil...

Germanium implant for use with ultra-shallow junctions

Method of fabricating semiconductor gate electrode with fluorine mi...

Method of making a semiconductor having selectively enhanced field...

Patents Applicationslast 30 patents

METHOD FOR CONTAINING A SILICIDED GATE WITHIN A SIDEWALL SPACER IN...