Ichiro Omura

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor device, manufacturing method for...
- Patent number 10,840,365
- Issue date Nov 17, 2020
- Kyushu Institute of Technology
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with super junction region
- Patent number RE47641
- Issue date Oct 8, 2019
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
Information Patent Grant
Method for fabricating high-voltage insulated gate type bipolar sem...
- Patent number 10,411,111
- Issue date Sep 10, 2019
- Kyushu Institute of Technology
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number RE47198
- Issue date Jan 8, 2019
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
Information Patent Grant
Semiconductor device with alternating conductivity type layers havi...
- Patent number RE46799
- Issue date Apr 17, 2018
- Kabushiki Kaisha Toshiba
- Wataru Saito
Information Patent Grant
Semiconductor device
- Patent number 7,915,617
- Issue date Mar 29, 2011
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device
- Patent number 7,868,397
- Issue date Jan 11, 2011
- Kabushiki Kaisha Toshiba
- Masanori Tsukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 7,864,021
- Issue date Jan 4, 2011
- Kabushiki Kaisha Toshiba
- Kenichi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,838,926
- Issue date Nov 23, 2010
- Kabushiki Kaisha Toshiba
- Masanori Tsukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a plurality of gate electrodes
- Patent number 7,772,641
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,732,837
- Issue date Jun 8, 2010
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,723,783
- Issue date May 25, 2010
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having driver with temperature detection
- Patent number 7,652,510
- Issue date Jan 26, 2010
- Kabushiki Kaisha Toshiba
- Masato Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module
- Patent number 7,633,153
- Issue date Dec 15, 2009
- Kabushiki Kaisha Toshiba
- Kazuo Shimokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including a terminal structure
- Patent number 7,564,107
- Issue date Jul 21, 2009
- Kabushiki Kaisha Toshiba
- Satoshi Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of manufacturing the same
- Patent number 7,554,155
- Issue date Jun 30, 2009
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switching element
- Patent number 7,531,871
- Issue date May 12, 2009
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having power semiconductor elements
- Patent number 7,531,876
- Issue date May 12, 2009
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module
- Patent number 7,514,783
- Issue date Apr 7, 2009
- Kabushiki Kaisha Toshiba
- Kazuo Shimokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using a nitride semiconductor
- Patent number 7,508,015
- Issue date Mar 24, 2009
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,462,909
- Issue date Dec 9, 2008
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate driving circuit and gate driving method of power MOSFET
- Patent number 7,459,945
- Issue date Dec 2, 2008
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 7,385,250
- Issue date Jun 10, 2008
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,329,909
- Issue date Feb 12, 2008
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,319,257
- Issue date Jan 15, 2008
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,317,225
- Issue date Jan 8, 2008
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device such as transverse power FET for high...
- Patent number 7,304,331
- Issue date Dec 4, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,294,886
- Issue date Nov 13, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 7,276,773
- Issue date Oct 2, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,271,429
- Issue date Sep 18, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ROGOWSKI-TYPE CURRENT SENSOR AND INVERTER, AND METHOD OF MOUNTING R...
- Publication number 20240168062
- Publication date May 23, 2024
- KYUSHU INSTITUTE OF TECHNOLOGY
- Ichiro OMURA
- G01 - MEASURING TESTING
Information Patent Application
STATE ESTIMATION SYSTEM AND STATE ESTIMATION METHOD FOR POWER CONVE...
- Publication number 20220334152
- Publication date Oct 20, 2022
- TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Haruyuki YAMAGUCHI
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR DEVICE, MANUFACTURING METHOD FOR...
- Publication number 20200098902
- Publication date Mar 26, 2020
- KYUSHU INSTITUTE OF TECHNOLOGY
- Ichiro OMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGH-VOLTAGE INSULATED GATE TYPE BIPOLAR SEM...
- Publication number 20180145147
- Publication date May 24, 2018
- KYUSHU INSTITUTE OF TECHNOLOGY
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE INSULATED GATE TYPE POWER SEMICONDUCTOR DEVICE AND MET...
- Publication number 20150123165
- Publication date May 7, 2015
- KYUSHU INSTITUTE OF TECHNOLOGY
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110042715
- Publication date Feb 24, 2011
- Kabushiki Kaisha Toshiba
- Masanori TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090206365
- Publication date Aug 20, 2009
- Kabushiki Kaisha Toshiba
- Masanori TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20090128279
- Publication date May 21, 2009
- Kabushiki Kaisha Toshiba
- Kenichi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE
- Publication number 20090095977
- Publication date Apr 16, 2009
- Kabushiki Kaisha Toshiba
- Masanori TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080303581
- Publication date Dec 11, 2008
- Kabushiki Kaisha Toshiba
- Masato IZUMI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20070257376
- Publication date Nov 8, 2007
- Kabushiki Kaisha Toshiba
- Kazuo Shimokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20070257708
- Publication date Nov 8, 2007
- Kabushiki Kaisha Toshiba
- Kazuo Shimokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20070241337
- Publication date Oct 18, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...
- Publication number 20070210350
- Publication date Sep 13, 2007
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070114602
- Publication date May 24, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20070114570
- Publication date May 24, 2007
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20070040217
- Publication date Feb 22, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070007537
- Publication date Jan 11, 2007
- KABUSHIKI KAISHA TOSHIBA
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060289915
- Publication date Dec 28, 2006
- KABUSHIKI KAISHA TOSHIBA
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060284248
- Publication date Dec 21, 2006
- KABUSHIKI KAISHA TOSHIBA
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing same
- Publication number 20060220156
- Publication date Oct 5, 2006
- KABUSHIKI KAISHA TOSHIBA
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing same
- Publication number 20060216896
- Publication date Sep 28, 2006
- KABUSHIKI KAISHA TOSHIBA
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device
- Publication number 20060170003
- Publication date Aug 3, 2006
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device and method of manufacturing the same
- Publication number 20060157813
- Publication date Jul 20, 2006
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060145298
- Publication date Jul 6, 2006
- KABUSHIKI KAISHA TOSHIBA
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20060145290
- Publication date Jul 6, 2006
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor switching element
- Publication number 20060145230
- Publication date Jul 6, 2006
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE USING A NITRIDE SEMICONDUCTOR
- Publication number 20060138454
- Publication date Jun 29, 2006
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060131644
- Publication date Jun 22, 2006
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer support plate, holding method of thin wafer, and manufacturin...
- Publication number 20060102290
- Publication date May 18, 2006
- Susumu Harada
- H01 - BASIC ELECTRIC ELEMENTS

Ichiro Omura

Person

Patents Grantslast 30 patents

Insulated gate bipolar transistor device, manufacturing method for...

Semiconductor device with super junction region

Method for fabricating high-voltage insulated gate type bipolar sem...

Power semiconductor device

Semiconductor device with alternating conductivity type layers havi...

Semiconductor device

Vertical semiconductor device

Integrated circuit device

Semiconductor device

Power semiconductor device with a plurality of gate electrodes

Nitride semiconductor device

Semiconductor device

Semiconductor device having driver with temperature detection

Semiconductor module

Power semiconductor device including a terminal structure

Power semiconductor device and method of manufacturing the same

Power semiconductor switching element

Semiconductor device having power semiconductor elements

Semiconductor module

Semiconductor device using a nitride semiconductor

Semiconductor device and method of fabricating the same

Gate driving circuit and gate driving method of power MOSFET

Semiconductor device

Nitride semiconductor device

Power semiconductor device

Power semiconductor device

Nitride semiconductor device such as transverse power FET for high...

Power semiconductor device

Power semiconductor device

Nitride semiconductor device

Patents Applicationslast 30 patents

ROGOWSKI-TYPE CURRENT SENSOR AND INVERTER, AND METHOD OF MOUNTING R...

STATE ESTIMATION SYSTEM AND STATE ESTIMATION METHOD FOR POWER CONVE...

INSULATED GATE BIPOLAR TRANSISTOR DEVICE, MANUFACTURING METHOD FOR...

METHOD FOR FABRICATING HIGH-VOLTAGE INSULATED GATE TYPE BIPOLAR SEM...

HIGH-VOLTAGE INSULATED GATE TYPE POWER SEMICONDUCTOR DEVICE AND MET...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICE

VERTICAL SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR MODULE

SEMICONDUCTOR MODULE

NITRIDE SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

Semiconductor device

Semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor device and method for manufacturing same

Semiconductor device and method for manufacturing same

Nitride semiconductor device

Power semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Power semiconductor switching element

SEMICONDUCTOR DEVICE USING A NITRIDE SEMICONDUCTOR

Power semiconductor device

Wafer support plate, holding method of thin wafer, and manufacturin...